Abstract
We discuss the stress driven roughening transition of SixGe1-x thin films. In the case of annealed films, nucleation effects dominate the nature of the surface ripple which formed by a cooperative nucleation mechanism. Individual islands appear to nucleate via multilayer fluctuations. Faceting can however be suppressed at high supersaturations, resulting in a transition with characteristics of the Asaro-Tiller-Grinfeld instability. The relationship between morphological evolution and dislocation nucleation and multiplication is considered.
Original language | English |
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Pages (from-to) | 1039-1047 |
Number of pages | 9 |
Journal | Journal of Electronic Materials |
Volume | 26 |
Issue number | 9 |
DOIs | |
State | Published - Sep 1997 |
Externally published | Yes |
Funding
This research was sponsored by the Division of Materials Science, U.S. Department of Energy, under Contract No. DE-AC05-84OR21400 with Lockheed Martin Energy Systems, Inc. We would like to acknowledge the invaluable contributions of J.-M. Baribeau and D.C. Houghton of the National Research Council, Canada 9
Funders | Funder number |
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Division of Materials Science | |
U.S. Department of Energy |
Keywords
- Heteroepitaxy
- Interface roughening
- SiGe