Mechanisms of strain induced roughening and dislocation multiplication in SixGe1-x thin films

D. E. Jesson, K. M. Chen, S. J. Pennycook, T. Thundat, R. J. Warmack

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

We discuss the stress driven roughening transition of SixGe1-x thin films. In the case of annealed films, nucleation effects dominate the nature of the surface ripple which formed by a cooperative nucleation mechanism. Individual islands appear to nucleate via multilayer fluctuations. Faceting can however be suppressed at high supersaturations, resulting in a transition with characteristics of the Asaro-Tiller-Grinfeld instability. The relationship between morphological evolution and dislocation nucleation and multiplication is considered.

Original languageEnglish
Pages (from-to)1039-1047
Number of pages9
JournalJournal of Electronic Materials
Volume26
Issue number9
DOIs
StatePublished - Sep 1997
Externally publishedYes

Funding

This research was sponsored by the Division of Materials Science, U.S. Department of Energy, under Contract No. DE-AC05-84OR21400 with Lockheed Martin Energy Systems, Inc. We would like to acknowledge the invaluable contributions of J.-M. Baribeau and D.C. Houghton of the National Research Council, Canada 9

FundersFunder number
Division of Materials Science
U.S. Department of Energy

    Keywords

    • Heteroepitaxy
    • Interface roughening
    • SiGe

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