Mechanism of Antiferroelectricity in Polycrystalline ZrO2

Richard Ganser, Patrick D. Lomenzo, Liam Collins, Bohan Xu, Luis Azevedo Antunes, Thomas Mikolajick, Uwe Schroeder, Alfred Kersch

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

The size and electric field dependent induction of polarization in antiferroelectric ZrO2 is the key to several technological applications that are unimaginable a decade ago. However, the lack of a deeper understanding of the mechanism hinders progress. Molecular dynamics simulations of polycrystalline ZrO2, based on machine-learned interatomic forces with near ab initio quality, shed light on the fundamental mechanism of the size effect on the transition fields. Stress in the oxygen sublattice is the most important factor. The so constructed interatomic forces allow the calculation of the transition fields as a function of the ZrO2 film thickness and predict the ferroelectricity at large thickness. The simulation results are validated with electrical and piezo response force microscopy measurements. The results allow a clear interpretation of the properties of the double-hysteresis loops as well as the construction of the free energy landscape of ZrO2 grains.

Original languageEnglish
Article number2405513
JournalAdvanced Functional Materials
Volume34
Issue number40
DOIs
StatePublished - Oct 1 2024

Keywords

  • ferroelectricity
  • interfacial layer
  • phase transition
  • thin film
  • transition field
  • zirconia

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