Mechanism for nonlinear I-V behaviour and the temperature dependence of threshold switching in the Se-Te-Sn system

B. D. Muragi; M. J. Zope; J. K. Zope

doi:10.1007/BF01141596

Mechanism for nonlinear I-V behaviour and the temperature dependence of threshold switching in the Se-Te-Sn system

B. D. Muragi, M. J. Zope, J. K. Zope

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Abstract

The nonlinear I-V behaviour and threshold switching of the bulk Se-Te-Sn system have been experimentally studied at various temperatures. It is observed that the curves are linear for low voltages and become superlinear at higher voltages. After a certain voltage V_th, the current through the material shoots to a very high value and the potential across the material drops to a low value. It is also found that there is a decrease in V_th with increase in percentage of tin and temperature. An attempt is made to explain the nonlinear I-V behaviour and threshold switching on the basis of a microcrystallite model. A study of Se-Te-Sn system reveals that our results are in concurrence with the theoretical predictions.

Original language	English
Pages (from-to)	299-303
Number of pages	5
Journal	Applied Physics A: Materials Science and Processing
Volume	46
Issue number	4
DOIs	https://doi.org/10.1007/BF01141596
State	Published - Aug 1988
Externally published	Yes

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72.20

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10.1007/BF01141596

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title = "Mechanism for nonlinear I-V behaviour and the temperature dependence of threshold switching in the Se-Te-Sn system",

abstract = "The nonlinear I-V behaviour and threshold switching of the bulk Se-Te-Sn system have been experimentally studied at various temperatures. It is observed that the curves are linear for low voltages and become superlinear at higher voltages. After a certain voltage Vth, the current through the material shoots to a very high value and the potential across the material drops to a low value. It is also found that there is a decrease in Vth with increase in percentage of tin and temperature. An attempt is made to explain the nonlinear I-V behaviour and threshold switching on the basis of a microcrystallite model. A study of Se-Te-Sn system reveals that our results are in concurrence with the theoretical predictions.",

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AU - Muragi, B. D.

AU - Zope, M. J.

AU - Zope, J. K.

PY - 1988/8

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N2 - The nonlinear I-V behaviour and threshold switching of the bulk Se-Te-Sn system have been experimentally studied at various temperatures. It is observed that the curves are linear for low voltages and become superlinear at higher voltages. After a certain voltage Vth, the current through the material shoots to a very high value and the potential across the material drops to a low value. It is also found that there is a decrease in Vth with increase in percentage of tin and temperature. An attempt is made to explain the nonlinear I-V behaviour and threshold switching on the basis of a microcrystallite model. A study of Se-Te-Sn system reveals that our results are in concurrence with the theoretical predictions.

AB - The nonlinear I-V behaviour and threshold switching of the bulk Se-Te-Sn system have been experimentally studied at various temperatures. It is observed that the curves are linear for low voltages and become superlinear at higher voltages. After a certain voltage Vth, the current through the material shoots to a very high value and the potential across the material drops to a low value. It is also found that there is a decrease in Vth with increase in percentage of tin and temperature. An attempt is made to explain the nonlinear I-V behaviour and threshold switching on the basis of a microcrystallite model. A study of Se-Te-Sn system reveals that our results are in concurrence with the theoretical predictions.

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JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 4

ER -

Mechanism for nonlinear I-V behaviour and the temperature dependence of threshold switching in the Se-Te-Sn system

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