Mechanical control of electroresistive switching

Yunseok Kim; Simon J. Kelly; Anna Morozovska; Ehsan Kabiri Rahani; Evgheni Strelcov; Eugene Eliseev; Stephen Jesse; Michael D. Biegalski; Nina Balke; Nicole Benedek; Dmitri Strukov; J. Aarts; Inrok Hwang; Sungtaek Oh; Jin Sik Choi; Taekjib Choi; Bae Ho Park; Vivek B. Shenoy; Peter Maksymovych; Sergei V. Kalinin

doi:10.1021/nl401411r

Mechanical control of electroresistive switching

Yunseok Kim, Simon J. Kelly, Anna Morozovska, Ehsan Kabiri Rahani, Evgheni Strelcov, Eugene Eliseev, Stephen Jesse, Michael D. Biegalski, Nina Balke, Nicole Benedek, Dmitri Strukov, J. Aarts, Inrok Hwang, Sungtaek Oh, Jin Sik Choi, Taekjib Choi, Bae Ho Park, Vivek B. Shenoy, Peter Maksymovych, Sergei V. Kalinin

Research output: Contribution to journal › Article › peer-review

52 Scopus citations

Abstract

Hysteretic metal-insulator transitions (MIT) mediated by ionic dynamics or ferroic phase transitions underpin emergent applications for nonvolatile memories and logic devices. The vast majority of applications and studies have explored the MIT coupled to the electric field or temperarture. Here, we argue that MIT coupled to ionic dynamics should be controlled by mechanical stimuli, the behavior we refer to as the piezochemical effect. We verify this effect experimentally and demonstrate that it allows both studying materials physics and enabling novel data storage technologies with mechanical writing and current-based readout.

Original language	English
Pages (from-to)	4068-4074
Number of pages	7
Journal	Nano Letters
Volume	13
Issue number	9
DOIs	https://doi.org/10.1021/nl401411r
State	Published - Sep 11 2013

Funding

Funders	Funder number
National Science Foundation	1235870

Keywords

AFM
Piezochemical effect
mechanical force
metal-insulator transition
pressure

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10.1021/nl401411r

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Kim, Y., Kelly, S. J., Morozovska, A., Rahani, E. K., Strelcov, E., Eliseev, E., Jesse, S., Biegalski, M. D., Balke, N., Benedek, N., Strukov, D., Aarts, J., Hwang, I., Oh, S., Choi, J. S., Choi, T., Park, B. H., Shenoy, V. B., Maksymovych, P., & Kalinin, S. V. (2013). Mechanical control of electroresistive switching. Nano Letters, 13(9), 4068-4074. https://doi.org/10.1021/nl401411r

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title = "Mechanical control of electroresistive switching",

abstract = "Hysteretic metal-insulator transitions (MIT) mediated by ionic dynamics or ferroic phase transitions underpin emergent applications for nonvolatile memories and logic devices. The vast majority of applications and studies have explored the MIT coupled to the electric field or temperarture. Here, we argue that MIT coupled to ionic dynamics should be controlled by mechanical stimuli, the behavior we refer to as the piezochemical effect. We verify this effect experimentally and demonstrate that it allows both studying materials physics and enabling novel data storage technologies with mechanical writing and current-based readout.",

keywords = "AFM, Piezochemical effect, mechanical force, metal-insulator transition, pressure",

author = "Yunseok Kim and Kelly, {Simon J.} and Anna Morozovska and Rahani, {Ehsan Kabiri} and Evgheni Strelcov and Eugene Eliseev and Stephen Jesse and Biegalski, {Michael D.} and Nina Balke and Nicole Benedek and Dmitri Strukov and J. Aarts and Inrok Hwang and Sungtaek Oh and Choi, {Jin Sik} and Taekjib Choi and Park, {Bae Ho} and Shenoy, {Vivek B.} and Peter Maksymovych and Kalinin, {Sergei V.}",

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T1 - Mechanical control of electroresistive switching

AU - Kim, Yunseok

AU - Kelly, Simon J.

AU - Morozovska, Anna

AU - Rahani, Ehsan Kabiri

AU - Strelcov, Evgheni

AU - Eliseev, Eugene

AU - Jesse, Stephen

AU - Biegalski, Michael D.

AU - Balke, Nina

AU - Benedek, Nicole

AU - Strukov, Dmitri

AU - Aarts, J.

AU - Hwang, Inrok

AU - Oh, Sungtaek

AU - Choi, Jin Sik

AU - Choi, Taekjib

AU - Park, Bae Ho

AU - Shenoy, Vivek B.

AU - Maksymovych, Peter

AU - Kalinin, Sergei V.

PY - 2013/9/11

Y1 - 2013/9/11

N2 - Hysteretic metal-insulator transitions (MIT) mediated by ionic dynamics or ferroic phase transitions underpin emergent applications for nonvolatile memories and logic devices. The vast majority of applications and studies have explored the MIT coupled to the electric field or temperarture. Here, we argue that MIT coupled to ionic dynamics should be controlled by mechanical stimuli, the behavior we refer to as the piezochemical effect. We verify this effect experimentally and demonstrate that it allows both studying materials physics and enabling novel data storage technologies with mechanical writing and current-based readout.

AB - Hysteretic metal-insulator transitions (MIT) mediated by ionic dynamics or ferroic phase transitions underpin emergent applications for nonvolatile memories and logic devices. The vast majority of applications and studies have explored the MIT coupled to the electric field or temperarture. Here, we argue that MIT coupled to ionic dynamics should be controlled by mechanical stimuli, the behavior we refer to as the piezochemical effect. We verify this effect experimentally and demonstrate that it allows both studying materials physics and enabling novel data storage technologies with mechanical writing and current-based readout.

KW - AFM

KW - Piezochemical effect

KW - mechanical force

KW - metal-insulator transition

KW - pressure

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SN - 1530-6984

VL - 13

SP - 4068

EP - 4074

JO - Nano Letters

JF - Nano Letters

IS - 9

ER -

Mechanical control of electroresistive switching

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Keywords

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