Measurements of the melt dynamics in laser annealed semiconductors

P. S. Peercy; G. J. Calvin; M. O. Thompson; J. W. Mayer; R. B. Hammond

doi:10.1016/0378-4363(83)90307-8

Measurements of the melt dynamics in laser annealed semiconductors

P. S. Peercy
, G. J. Calvin
, M. O. Thompson
, J. W. Mayer
, R. B. Hammond

Alloy Behavior & Design

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Combined measurements of the transient electrical conductance, optical reflectance and absorbed energy have been used to determine the dynamics of the annealing process during laser irradiation of bulk silicon and silicon on sapphire. The combined transient conductance and optical reflectance yield the regrowth velocity and melt duration in bulk silicon; in silicon on sapphire the measurements also yield the melt velocity and maximum melt depth. Measurement of the absorbed energy provides energy coupling data used in numerical calculations of the melt dynamics for direct comparison with experiment in bulk silicon and the result indicates annealing proceeds by a purely thermal process.

Original language	English
Pages (from-to)	558-563
Number of pages	6
Journal	Physica B+C
Volume	116
Issue number	1-3
DOIs	https://doi.org/10.1016/0378-4363(83)90307-8
State	Published - Feb 1983

Funding

Acknowledgements: The work at Sanala was supported hy the U.S. Department of Energy under contract No. DE-ACO4-76nP007Rq. The work at Cornell was supported in part hy VHSIC (AF-Wright Patterson F33RIh-RO-C-IIq7~. Michael Thompson gratefully acknowledges support through a National Science Foundation fel]ow-ship.

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title = "Measurements of the melt dynamics in laser annealed semiconductors",

abstract = "Combined measurements of the transient electrical conductance, optical reflectance and absorbed energy have been used to determine the dynamics of the annealing process during laser irradiation of bulk silicon and silicon on sapphire. The combined transient conductance and optical reflectance yield the regrowth velocity and melt duration in bulk silicon; in silicon on sapphire the measurements also yield the melt velocity and maximum melt depth. Measurement of the absorbed energy provides energy coupling data used in numerical calculations of the melt dynamics for direct comparison with experiment in bulk silicon and the result indicates annealing proceeds by a purely thermal process.",

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AU - Peercy, P. S.

AU - Calvin, G. J.

AU - Thompson, M. O.

AU - Mayer, J. W.

AU - Hammond, R. B.

PY - 1983/2

Y1 - 1983/2

N2 - Combined measurements of the transient electrical conductance, optical reflectance and absorbed energy have been used to determine the dynamics of the annealing process during laser irradiation of bulk silicon and silicon on sapphire. The combined transient conductance and optical reflectance yield the regrowth velocity and melt duration in bulk silicon; in silicon on sapphire the measurements also yield the melt velocity and maximum melt depth. Measurement of the absorbed energy provides energy coupling data used in numerical calculations of the melt dynamics for direct comparison with experiment in bulk silicon and the result indicates annealing proceeds by a purely thermal process.

AB - Combined measurements of the transient electrical conductance, optical reflectance and absorbed energy have been used to determine the dynamics of the annealing process during laser irradiation of bulk silicon and silicon on sapphire. The combined transient conductance and optical reflectance yield the regrowth velocity and melt duration in bulk silicon; in silicon on sapphire the measurements also yield the melt velocity and maximum melt depth. Measurement of the absorbed energy provides energy coupling data used in numerical calculations of the melt dynamics for direct comparison with experiment in bulk silicon and the result indicates annealing proceeds by a purely thermal process.

UR - https://www.scopus.com/pages/publications/49049126728

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DO - 10.1016/0378-4363(83)90307-8

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JO - Physica B+C

JF - Physica B+C

IS - 1-3

ER -

Measurements of the melt dynamics in laser annealed semiconductors

Abstract

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