Measurement of thermally-induced strains in polycrystalline Al thin films on Si using convergent beam electron diffraction

S. K. Streiffer, S. Bader, C. Deininger, J. Mayer, M. Ruehle

Research output: Contribution to journalConference articlepeer-review

8 Scopus citations

Abstract

Strains in polycrystalline Al films grown on oxidized Si wafers were measured using convergent beam electron diffraction (CBED). CBED patterns were acquired on a Zeiss EM 912 TEM equipped with an imaging energy filter and CCD camera. HOLZ line positions in the (000) CBED disk were matched using an automated refinement procedure. A sensitivity to variations in lattice parameter of approximately 0.00007 nm was obtained. Strong deviations from a simple equibiaxial strain, perfect [111] texture model were observed.

Original languageEnglish
Pages (from-to)615-620
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume343
DOIs
StatePublished - 1994
Externally publishedYes
EventProceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 5 1994Apr 8 1994

Fingerprint

Dive into the research topics of 'Measurement of thermally-induced strains in polycrystalline Al thin films on Si using convergent beam electron diffraction'. Together they form a unique fingerprint.

Cite this