Measurement of the velocity of the crystal-liquid interface in pulsed laser annealing of Si

G. J. Galvin; M. O. Thompson; J. W. Mayer; R. B. Hammond; N. Paulter; P. S. Peercy

doi:10.1103/PhysRevLett.48.33

Measurement of the velocity of the crystal-liquid interface in pulsed laser annealing of Si

G. J. Galvin
, M. O. Thompson
, J. W. Mayer
, R. B. Hammond
, N. Paulter
, P. S. Peercy

Research output: Contribution to journal › Article › peer-review

127 Scopus citations

Abstract

The conductance of Au-doped Si single crystals was measured during irradiation with 30-nsec Q-switched ruby-laser pulses at energy densities above the Si melting threshold (∼0.9 J/cm2). The sample conductance is determined primarily by the thickness of the molten layer so that the solid-liquid interface velocity can be found from the current transient. The interface velocity during crystallization was found to be 2.7±0.1 m/sec, in close agreement with calculated values based on a heat-flow model.

Original language	English
Pages (from-to)	33-36
Number of pages	4
Journal	Physical Review Letters
Volume	48
Issue number	1
DOIs	https://doi.org/10.1103/PhysRevLett.48.33
State	Published - 1982
Externally published	Yes

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title = "Measurement of the velocity of the crystal-liquid interface in pulsed laser annealing of Si",

abstract = "The conductance of Au-doped Si single crystals was measured during irradiation with 30-nsec Q-switched ruby-laser pulses at energy densities above the Si melting threshold (∼0.9 J/cm2). The sample conductance is determined primarily by the thickness of the molten layer so that the solid-liquid interface velocity can be found from the current transient. The interface velocity during crystallization was found to be 2.7±0.1 m/sec, in close agreement with calculated values based on a heat-flow model.",

author = "Galvin, \{G. J.\} and Thompson, \{M. O.\} and Mayer, \{J. W.\} and Hammond, \{R. B.\} and N. Paulter and Peercy, \{P. S.\}",

year = "1982",

doi = "10.1103/PhysRevLett.48.33",

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journal = "Physical Review Letters",

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AU - Galvin, G. J.

AU - Thompson, M. O.

AU - Mayer, J. W.

AU - Hammond, R. B.

AU - Paulter, N.

AU - Peercy, P. S.

PY - 1982

Y1 - 1982

N2 - The conductance of Au-doped Si single crystals was measured during irradiation with 30-nsec Q-switched ruby-laser pulses at energy densities above the Si melting threshold (∼0.9 J/cm2). The sample conductance is determined primarily by the thickness of the molten layer so that the solid-liquid interface velocity can be found from the current transient. The interface velocity during crystallization was found to be 2.7±0.1 m/sec, in close agreement with calculated values based on a heat-flow model.

AB - The conductance of Au-doped Si single crystals was measured during irradiation with 30-nsec Q-switched ruby-laser pulses at energy densities above the Si melting threshold (∼0.9 J/cm2). The sample conductance is determined primarily by the thickness of the molten layer so that the solid-liquid interface velocity can be found from the current transient. The interface velocity during crystallization was found to be 2.7±0.1 m/sec, in close agreement with calculated values based on a heat-flow model.

UR - https://www.scopus.com/pages/publications/35949023345

U2 - 10.1103/PhysRevLett.48.33

DO - 10.1103/PhysRevLett.48.33

M3 - Article

AN - SCOPUS:35949023345

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VL - 48

SP - 33

EP - 36

JO - Physical Review Letters

JF - Physical Review Letters

IS - 1

ER -

Measurement of the velocity of the crystal-liquid interface in pulsed laser annealing of Si

Abstract

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