Measurement of proton induced radiation damage to cmos transistors and pin diodes

H. J. Ziock; C. M. Hoffman; D. Holtkamp; W. W. Kinnison; C. Milner; W. F. Sommer; J. Bacigalupi; N. Cartiglia; J. DeWitt; A. Kaluzniacki; H. Kolanoski; D. Pitzl; W. A. Rowe; H. F.W. Sadrozinski; E. Spencer; P. Tenenbaum; P. Ferguson; P. Giubellino; S. Sartori

doi:10.1109/23.57372

Measurement of proton induced radiation damage to cmos transistors and pin diodes

H. J. Ziock, C. M. Hoffman, D. Holtkamp, W. W. Kinnison, C. Milner, W. F. Sommer, J. Bacigalupi, N. Cartiglia, J. DeWitt, A. Kaluzniacki, H. Kolanoski, D. Pitzl, W. A. Rowe, H. F.W. Sadrozinski, E. Spencer, P. Tenenbaum, P. Ferguson, P. Giubellino, S. Sartori

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Abstract

As part of our program to develop a silicon tracking device for the SSC we have exposed radiation-hard CMOS transistors and PIN diodes to the 800 MeV LAMPF proton beam. The fluences accumulated in a week corresponded to the expected radiation levels of about 10 SSC years. We determine the leakage current constants for PIN diodes and threshold voltage shifts for CMOS transistors under different biasing conditions.

Original language	English
Pages (from-to)	1238-1241
Number of pages	4
Journal	IEEE Transactions on Nuclear Science
Volume	37
Issue number	3
DOIs	https://doi.org/10.1109/23.57372
State	Published - Jun 1990

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Ziock, H. J., Hoffman, C. M., Holtkamp, D., Kinnison, W. W., Milner, C., Sommer, W. F., Bacigalupi, J., Cartiglia, N., DeWitt, J., Kaluzniacki, A., Kolanoski, H., Pitzl, D., Rowe, W. A., Sadrozinski, H. F. W., Spencer, E., Tenenbaum, P., Ferguson, P., Giubellino, P., & Sartori, S. (1990). Measurement of proton induced radiation damage to cmos transistors and pin diodes. IEEE Transactions on Nuclear Science, 37(3), 1238-1241. https://doi.org/10.1109/23.57372

@article{988611776d5749fb942b6a582e97199f,

title = "Measurement of proton induced radiation damage to cmos transistors and pin diodes",

abstract = "As part of our program to develop a silicon tracking device for the SSC we have exposed radiation-hard CMOS transistors and PIN diodes to the 800 MeV LAMPF proton beam. The fluences accumulated in a week corresponded to the expected radiation levels of about 10 SSC years. We determine the leakage current constants for PIN diodes and threshold voltage shifts for CMOS transistors under different biasing conditions.",

author = "Ziock, \{H. J.\} and Hoffman, \{C. M.\} and D. Holtkamp and Kinnison, \{W. W.\} and C. Milner and Sommer, \{W. F.\} and J. Bacigalupi and N. Cartiglia and J. DeWitt and A. Kaluzniacki and H. Kolanoski and D. Pitzl and Rowe, \{W. A.\} and Sadrozinski, \{H. F.W.\} and E. Spencer and P. Tenenbaum and P. Ferguson and P. Giubellino and S. Sartori",

year = "1990",

month = jun,

doi = "10.1109/23.57372",

language = "English",

volume = "37",

pages = "1238--1241",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

publisher = "Institute of Electrical and Electronics Engineers",

number = "3",

}

Ziock, HJ, Hoffman, CM, Holtkamp, D, Kinnison, WW, Milner, C, Sommer, WF, Bacigalupi, J, Cartiglia, N, DeWitt, J, Kaluzniacki, A, Kolanoski, H, Pitzl, D, Rowe, WA, Sadrozinski, HFW, Spencer, E, Tenenbaum, P, Ferguson, P, Giubellino, P & Sartori, S 1990, 'Measurement of proton induced radiation damage to cmos transistors and pin diodes', IEEE Transactions on Nuclear Science, vol. 37, no. 3, pp. 1238-1241. https://doi.org/10.1109/23.57372

TY - JOUR

T1 - Measurement of proton induced radiation damage to cmos transistors and pin diodes

AU - Ziock, H. J.

AU - Hoffman, C. M.

AU - Holtkamp, D.

AU - Kinnison, W. W.

AU - Milner, C.

AU - Sommer, W. F.

AU - Bacigalupi, J.

AU - Cartiglia, N.

AU - DeWitt, J.

AU - Kaluzniacki, A.

AU - Kolanoski, H.

AU - Pitzl, D.

AU - Rowe, W. A.

AU - Sadrozinski, H. F.W.

AU - Spencer, E.

AU - Tenenbaum, P.

AU - Ferguson, P.

AU - Giubellino, P.

AU - Sartori, S.

PY - 1990/6

Y1 - 1990/6

N2 - As part of our program to develop a silicon tracking device for the SSC we have exposed radiation-hard CMOS transistors and PIN diodes to the 800 MeV LAMPF proton beam. The fluences accumulated in a week corresponded to the expected radiation levels of about 10 SSC years. We determine the leakage current constants for PIN diodes and threshold voltage shifts for CMOS transistors under different biasing conditions.

AB - As part of our program to develop a silicon tracking device for the SSC we have exposed radiation-hard CMOS transistors and PIN diodes to the 800 MeV LAMPF proton beam. The fluences accumulated in a week corresponded to the expected radiation levels of about 10 SSC years. We determine the leakage current constants for PIN diodes and threshold voltage shifts for CMOS transistors under different biasing conditions.

UR - https://www.scopus.com/pages/publications/84905548192

U2 - 10.1109/23.57372

DO - 10.1109/23.57372

M3 - Article

AN - SCOPUS:84905548192

SN - 0018-9499

VL - 37

SP - 1238

EP - 1241

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 3

ER -

Measurement of proton induced radiation damage to cmos transistors and pin diodes

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