Measurement of Indium-Content Variation in InGaN/GaN Dot-in-a-Wire Nanostructures by Electron Energy-Loss Spectroscopy

S. Y. Woo, S. Turner, N. Gauquelin, Z. Mi, G. A. Botton

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	1820-1821
Number of pages	2
Journal	Microscopy and Microanalysis
Volume	18
DOIs	https://doi.org/10.1017/S1431927612010951
State	Published - Jul 2012
Externally published	Yes

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title = "Measurement of Indium-Content Variation in InGaN/GaN Dot-in-a-Wire Nanostructures by Electron Energy-Loss Spectroscopy",

author = "Woo, \{S. Y.\} and S. Turner and N. Gauquelin and Z. Mi and Botton, \{G. A.\}",

year = "2012",

month = jul,

doi = "10.1017/S1431927612010951",

language = "English",

volume = "18",

pages = "1820--1821",

journal = "Microscopy and Microanalysis",

issn = "1431-9276",

publisher = "Oxford University Press",

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T1 - Measurement of Indium-Content Variation in InGaN/GaN Dot-in-a-Wire Nanostructures by Electron Energy-Loss Spectroscopy

AU - Woo, S. Y.

AU - Turner, S.

AU - Gauquelin, N.

AU - Mi, Z.

AU - Botton, G. A.

PY - 2012/7

Y1 - 2012/7

UR - https://www.scopus.com/pages/publications/85007986090

U2 - 10.1017/S1431927612010951

DO - 10.1017/S1431927612010951

M3 - Article

AN - SCOPUS:85007986090

SN - 1431-9276

VL - 18

SP - 1820

EP - 1821

JO - Microscopy and Microanalysis

JF - Microscopy and Microanalysis

ER -