Maximum drain efficiency class F3 RF power amplifier

Marian K. Kazimierczuk; Rafal P. Wojda

doi:10.1109/ISCAS.2011.5938183

Maximum drain efficiency class F₃ RF power amplifier

Marian K. Kazimierczuk, Rafal P. Wojda

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

15 Scopus citations

Abstract

This paper presents a design procedure for the class F₃ RF power amplifier. The required range of the drain current conduction angle for the class F₃ power amplifier is specified. Additionally, an equation for the resistance of the third harmonic resonant circuit is given. Class F ₃, AB, and C power amplifiers were designed and simulated to compare their respective performance in terms of efficiency.

Original language	English
Title of host publication	2011 IEEE International Symposium of Circuits and Systems, ISCAS 2011
Pages	2785-2788
Number of pages	4
DOIs	https://doi.org/10.1109/ISCAS.2011.5938183
State	Published - 2011
Externally published	Yes
Event	2011 IEEE International Symposium of Circuits and Systems, ISCAS 2011 - Rio de Janeiro, Brazil Duration: May 15 2011 → May 18 2011

Publication series

Name	Proceedings - IEEE International Symposium on Circuits and Systems
ISSN (Print)	0271-4310

Conference

Conference	2011 IEEE International Symposium of Circuits and Systems, ISCAS 2011
Country/Territory	Brazil
City	Rio de Janeiro
Period	05/15/11 → 05/18/11

Access to Document

10.1109/ISCAS.2011.5938183

Cite this

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title = "Maximum drain efficiency class F3 RF power amplifier",

abstract = "This paper presents a design procedure for the class F3 RF power amplifier. The required range of the drain current conduction angle for the class F3 power amplifier is specified. Additionally, an equation for the resistance of the third harmonic resonant circuit is given. Class F 3, AB, and C power amplifiers were designed and simulated to compare their respective performance in terms of efficiency.",

author = "Kazimierczuk, {Marian K.} and Wojda, {Rafal P.}",

year = "2011",

doi = "10.1109/ISCAS.2011.5938183",

language = "English",

isbn = "9781424494736",

series = "Proceedings - IEEE International Symposium on Circuits and Systems",

pages = "2785--2788",

booktitle = "2011 IEEE International Symposium of Circuits and Systems, ISCAS 2011",

note = "2011 IEEE International Symposium of Circuits and Systems, ISCAS 2011 ; Conference date: 15-05-2011 Through 18-05-2011",

}

Kazimierczuk, MK & Wojda, RP 2011, Maximum drain efficiency class F₃ RF power amplifier. in 2011 IEEE International Symposium of Circuits and Systems, ISCAS 2011., 5938183, Proceedings - IEEE International Symposium on Circuits and Systems, pp. 2785-2788, 2011 IEEE International Symposium of Circuits and Systems, ISCAS 2011, Rio de Janeiro, Brazil, 05/15/11. https://doi.org/10.1109/ISCAS.2011.5938183

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AU - Wojda, Rafal P.

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AB - This paper presents a design procedure for the class F3 RF power amplifier. The required range of the drain current conduction angle for the class F3 power amplifier is specified. Additionally, an equation for the resistance of the third harmonic resonant circuit is given. Class F 3, AB, and C power amplifiers were designed and simulated to compare their respective performance in terms of efficiency.

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T3 - Proceedings - IEEE International Symposium on Circuits and Systems

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BT - 2011 IEEE International Symposium of Circuits and Systems, ISCAS 2011

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