Mapping polarization fields in Al0.85In0.15N/AlN/GaN heterostructures

Lin Zhou, David A. Cullen, David J. Smith, Anas Mouti, M. Gonschorek, E. Feltin, J. F. Carlin, N. Grandjean, Martha R. McCartney

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Pages (from-to)1048-1049
Number of pages2
JournalMicroscopy and Microanalysis
Volume15
Issue numberSUPPL. 2
DOIs
StatePublished - Jul 2009
Externally publishedYes

Funding

References [1] J. Kuzmík, IEEE Electron Device Lett. 22, (2001) 510. [2] M. Gonschorek, et. al., Appl. Phys. Lett. 89, 062106 (2006). [3] L. Zhou, et. al., Appl. Phys. Lett. submitted. [4] M. Gonschorek, et. al., J. Appl. Phys. 103, (2008) 093714. [5] This work was supported by a contract from Wright Patterson Air Force Base (Monitor: C. Bozada) and the Swiss National Science Foundation (Contract No. 200021-107642/1). We acknowledge use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University.

FundersFunder number
Wright Patterson Air Force Base
Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung200021-107642/1

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