Mapping polarization fields in Al0.85In0.15N/AlN/GaN heterostructures

Lin Zhou, David A. Cullen, David J. Smith, Anas Mouti, M. Gonschorek, E. Feltin, J. F. Carlin, N. Grandjean, Martha R. McCartney

Research output: Contribution to journalArticlepeer-review

1 Scopus citations
Original languageEnglish
Pages (from-to)1048-1049
Number of pages2
JournalMicroscopy and Microanalysis
Volume15
Issue numberSUPPL. 2
DOIs
StatePublished - Jul 2009
Externally publishedYes

Funding

References [1] J. Kuzmík, IEEE Electron Device Lett. 22, (2001) 510. [2] M. Gonschorek, et. al., Appl. Phys. Lett. 89, 062106 (2006). [3] L. Zhou, et. al., Appl. Phys. Lett. submitted. [4] M. Gonschorek, et. al., J. Appl. Phys. 103, (2008) 093714. [5] This work was supported by a contract from Wright Patterson Air Force Base (Monitor: C. Bozada) and the Swiss National Science Foundation (Contract No. 200021-107642/1). We acknowledge use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University.

Cite this