Manipulation of the Magnetoresistance by Strain in Topological TaSe3

  • Jie Xing
  • , Joanna Blawat
  • , Smita Speer
  • , Ahmad Ikhwan Us Saleheen
  • , John Singleton
  • , Rongying Jin

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

1D TaSe3 exhibits many unusual physical properties due to its distorted type-II chains. Ribbon-shaped single crystals can be easily bended along the b-axis, forming rings. This study investigates the magnetoresistance (MR) of TaSe3 up to 60 T in both unbended (ribbon shape) and ring-shaped (bended ribbon) samples. Notable changes are found in the magnetotransport properties between the two different shaped samples. One is that the MR in ring-shaped samples is three orders lower than that in unbended samples under the same sample environment. In addition, linear MR is observed above ≈20 T in ring-shaped samples when the magnetic field is parallel or perpendicular to the rings. Quantum oscillations are also observed as a function of the magnetic field when the magnetic field is applied parallel to rings, possibly due to the Altshuler–Aronov–Spivak effect or the inversion of the lowest Landau level beyond the quantum limit. All these results are related to strain-induced electronic structure change in TaSe3, an effective way to tune physical properties in low-dimensional materials.

Original languageEnglish
Article number2200094
JournalAdvanced Quantum Technologies
Volume5
Issue number12
DOIs
StatePublished - Dec 2022
Externally publishedYes

Funding

This material is based upon work supported by the U.S. Department of Energy under EPSCoR Grant No. DE-SC0012432 and the U.S. National Science Foundation under Grant No. DMR-1504226. A portion of this work was performed at the National High Magnetic Field Laboratory (NHMFL), which was supported by National Science Foundation Cooperative Agreement Nos. DMR-1157490 and DMR- 1644779, the State of Florida and the Department of Energy (DOE). J.S. acknowledges support from the DOE BES program “Science at 100 T,” which permitted the design and construction of much of the specialized equipment used in the high-field studies. This material is based upon work supported by the U.S. Department of Energy under EPSCoR Grant No. DE‐SC0012432 and the U.S. National Science Foundation under Grant No. DMR‐1504226. A portion of this work was performed at the National High Magnetic Field Laboratory (NHMFL), which was supported by National Science Foundation Cooperative Agreement Nos. DMR‐1157490 and DMR‐ 1644779, the State of Florida and the Department of Energy (DOE). J.S. acknowledges support from the DOE BES program “Science at 100 T,” which permitted the design and construction of much of the specialized equipment used in the high‐field studies.

Keywords

  • magnetoresistance
  • quantum oscillations
  • strain effect

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