Manipulating Interlayer Excitons for Near-Infrared Quantum Light Generation

Huan Zhao; Linghan Zhu; Xiangzhi Li; Vigneshwaran Chandrasekaran; Jon Kevin Baldwin; Michael T. Pettes; Andrei Piryatinski; Li Yang; Han Htoon

doi:10.1021/acs.nanolett.3c03296

Manipulating Interlayer Excitons for Near-Infrared Quantum Light Generation

Huan Zhao, Linghan Zhu, Xiangzhi Li, Vigneshwaran Chandrasekaran, Jon Kevin Baldwin, Michael T. Pettes, Andrei Piryatinski, Li Yang, Han Htoon

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Interlayer excitons (IXs) formed at the interface of van der Waals materials possess various novel properties. In parallel development, strain engineering has emerged as an effective means for creating 2D quantum emitters. Exploring the intersection of these two exciting areas, we use MoS₂/WSe₂ heterostructure as a model system and demonstrate how strain, defects, and layering can be utilized to create defect-bound IXs capable of bright, robust, and tunable quantum light emission in the technologically important near-infrared spectral range. Our work presents defect-bound IXs as a promising platform for pushing the performance of 2D quantum emitters beyond their current limitations.

Original language	English
Pages (from-to)	11006-11012
Number of pages	7
Journal	Nano Letters
Volume	23
Issue number	23
DOIs	https://doi.org/10.1021/acs.nanolett.3c03296
State	Published - Dec 13 2023
Externally published	Yes

Funding

This work was performed at the Center for Integrated Nanotechnologies, an Office of Science User Facility operated for the U.S. Department of Energy (DOE), Office of Science, by Los Alamos National Laboratory (LANL). H.Z., X.L., and H.H. acknowledge the primary support by Quantum Science Center, a National Quantum Information Science Research Center supported by Office of Science, U.S. DOE. V.C. is supported by DOE BES Program BES LANL22. A.P. acknowledges support from the Laboratory Directed Research and Development (LDRD) program 20200104DR. M.T.P. is supported by LDRD 20210782ER and LDRD 20210640ECR. H.Z. also acknowledges a LANL Director’s Postdoctoral Fellow Award. L.Z. is supported by the National Science Foundation (NSF) Grant No. DMR-2124934, and L.Y. is supported by the Air Force Office of Scientific Research (AFOSR) Grant No. FA9550-20-1-0255. The first-principles simulation uses Anvil at Purdue University through allocation DMR100005 from the Advanced Cyberinfrastructure Coordination Ecosystem: Services & Support (ACCESS) program, which is supported by NSF grants #2138259, #2138286, #2138307, #2137603, and #2138296.

Keywords

2D heterostructures
TMDC
interlayer exciton
quantum emitters

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10.1021/acs.nanolett.3c03296

Cite this

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abstract = "Interlayer excitons (IXs) formed at the interface of van der Waals materials possess various novel properties. In parallel development, strain engineering has emerged as an effective means for creating 2D quantum emitters. Exploring the intersection of these two exciting areas, we use MoS2/WSe2 heterostructure as a model system and demonstrate how strain, defects, and layering can be utilized to create defect-bound IXs capable of bright, robust, and tunable quantum light emission in the technologically important near-infrared spectral range. Our work presents defect-bound IXs as a promising platform for pushing the performance of 2D quantum emitters beyond their current limitations.",

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AU - Baldwin, Jon Kevin

AU - Pettes, Michael T.

AU - Piryatinski, Andrei

AU - Yang, Li

AU - Htoon, Han

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AB - Interlayer excitons (IXs) formed at the interface of van der Waals materials possess various novel properties. In parallel development, strain engineering has emerged as an effective means for creating 2D quantum emitters. Exploring the intersection of these two exciting areas, we use MoS2/WSe2 heterostructure as a model system and demonstrate how strain, defects, and layering can be utilized to create defect-bound IXs capable of bright, robust, and tunable quantum light emission in the technologically important near-infrared spectral range. Our work presents defect-bound IXs as a promising platform for pushing the performance of 2D quantum emitters beyond their current limitations.

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Manipulating Interlayer Excitons for Near-Infrared Quantum Light Generation

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