Main memory latency simulation: The missing link

Rommel Sánchez Verdejo, Kazi Asifuzzaman, Milan Radulovic, Petar Radojković, Eduard Ayguadé, Bruce Jacob

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

The community accepted the need for a detailed simulation of main memory. Currently, the CPU simulators are usually coupled with the cycle-accurate main memory simulators. However, coupling CPU and memory simulators is not a straight-forward task because some pieces of the circuitry between the last level cache and the memory DIMMs could be easily overlooked and therefore not accounted for. In this paper, we take an approach to quantify the missing cycles in the main memory simulation. To that end, we execute a memory intensive microbenchmark to validate a simulation infrastructure based on ZSim and DRAMsim2 modeling an Intel Sandy Bridge E5-2670 system. We execute the same microbenchmark on a real Sandy Bridge E5-2670 machine identifying a missing 20 ns in the simulator measurements. This is a huge difference that, in the system under study, corresponds to one-third of the overall main memory latency. We propose multiple schemes to add an extra delay in the simulation model to account for the missing cycles. Furthermore, we validate the proposals using the SPEC CPU2006 benchmarks. Finally, we repeat the main memory latency measurements on seven mainstream and emerging computing platforms. Our results show that latency between the Last Level Cache (LLC) and the main memory ranges between tens and hundreds of nanoseconds, so we emphasize on properly adjust and validate these parameters in system simulators before any measurements are performed. Overall, we believe this study would improve main memory simulation leading to the better overall system analysis and explorations performed in the computer architecture community.

Original languageEnglish
Title of host publicationMEMSYS 2018 - Proceedings of the International Symposium on Memory Systems
PublisherAssociation for Computing Machinery
ISBN (Electronic)9781450364751
DOIs
StatePublished - Oct 1 2018
Externally publishedYes
Event2018 International Symposium on Memory Systems, MEMSYS 2018 - Alexandria, United States
Duration: Oct 1 2018Oct 4 2018

Publication series

NameACM International Conference Proceeding Series

Conference

Conference2018 International Symposium on Memory Systems, MEMSYS 2018
Country/TerritoryUnited States
CityAlexandria
Period10/1/1810/4/18

Funding

This work was supported by the collaboration agreement between Samsung Electronics Co., Ltd. and the Barcelona Supercomputing Center (BSC); Spanish Ministry of Science and Technology (project TIN2015-65316-P); Generalitat de Catalunya (contracts 2014-SGR-1051 and 2014-SGR-1272); the Severo Ochoa Programme (SEV-2015-0493) of the Spanish Government; the U.S. Department of Defense under Contract FA8075-14-D-0002-0007, TAT 15-1158; and the U.S. National Science Foundation under Award 1642424.

FundersFunder number
National Science Foundation1642424
U.S. Department of DefenseFA8075-14-D-0002-0007, TAT 15-1158
Generalitat de Catalunya2014-SGR-1272, 2014-SGR-1051
Ministerio de Ciencia y TecnologíaTIN2015-65316-P
Barcelona Supercomputing Center

    Keywords

    • DRAM
    • High performance computing
    • Main memory
    • Simulation

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