Magnetron sputter-deposited multilayer (BaxSr1x)Ti1+yO3+z thin films for passive and active devices

J. Im, O. Auciello, P. K. Baumann, S. K. Streiffer,, D. Y. Kaufman, A. R. Krauss

Research output: Contribution to journalConference articlepeer-review

5 Scopus citations

Abstract

High permittivity (BaxSr1-x)Ti1+yO3+z(BST) thin films are being investigated for integration into charge storage dielectrics and electric-field tunable elements for high frequency devices. For the latter application, it is desirable to have BST capacitors with high tunability and low losses. Therefore, we investigated the use of multilayer BST thin films consisting of very low dielectric loss BST/electrode interfacial layers ((Ba+Sr)/Ti = 0.73) sandwiching a high tunability, high permittivity primary BST layer ((Ba+Sr)/Ti = 0.9). BST capacitors with multiple layers of controlled composition can be effectively produced in-situ by magnetron sputter deposition, using a single stoichiometric target and controlling the layer composition by changing the total process gas (Ar+O2) pressure. The layered BST film capacitors exhibit simultaneous low loss (tan δ = 0.005), high tunability (76%), high charge storage energy density (34 J/cm3), low leakage, and high dielectric breakdown (>2.8 MV/cm).

Original languageEnglish
Pages (from-to)263-270
Number of pages8
JournalIntegrated Ferroelectrics
Volume34
Issue number1-4
DOIs
StatePublished - 2001
Externally publishedYes
Event12th International Symposium on Integrated Ferroelectrics - Aachen, Germany
Duration: Mar 12 2000Mar 15 2000

Keywords

  • BST
  • Energy storage dielectrics
  • Ferroelectric films
  • Voltage tunable dielectrics

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