Magnetic tunnel junctions featuring the topological Weyl semimetal Co2MnGa

Zhiping He; Chung Tao Chou; Eugene Park; Alexandre C. Foucher; Brooke C. McGoldrick; Qiuyuan Wang; Justin T. Hou; Luqiao Liu

doi:10.1103/PhysRevApplied.22.044024

Magnetic tunnel junctions featuring the topological Weyl semimetal Co2MnGa

Zhiping He, Chung Tao Chou, Eugene Park, Alexandre C. Foucher, Brooke C. McGoldrick, Qiuyuan Wang, Justin T. Hou, Luqiao Liu

Research output: Contribution to journal › Article › peer-review

Abstract

Magnetic Weyl semimetals are promising materials for spintronic applications due to their unique properties in bulk and surface topological states and the rich interplay between band topology and magnetism. While various nontraditional magneto-electrical effects have been studied in magnetic Weyl semimetals, transport properties related to spin-polarized tunneling from these materials remain less explored. In this work, we developed fully epitaxial magnetic tunnel junctions (MTJs) based on a ferromagnetic Weyl semimetal Co2MnGa. By growing Co2MnGa films under different conditions, we fabricated a series of MTJs possessing different degrees of order in the semimetal electrodes and compared their tunneling magnetoresistance (TMR). We find that the TMR becomes enhanced with the improvement of the chemical ordering of Co2MnGa. Our results reveal the relationship between the spin tunneling in MTJs and the chemical order of the Co2MnGa electrode and provide insights on further enhancing TMR via semimetal engineering.

Original language	English
Article number	044024
Journal	Physical Review Applied
Volume	22
Issue number	4
DOIs	https://doi.org/10.1103/PhysRevApplied.22.044024
State	Published - Oct 2024
Externally published	Yes

Funding

This work was supported in part by the Semiconductor Research Corporation (SRC) and DARPA. B.M. was supported by National Science Foundation under Grant No. DMR-2104912. The authors thank Frances M. Ross for helpful discussions on Scanning Transmission Electron Microscopy (STEM) imaging. E.P. and Q.W. acknowledge support from the MathWorks Fellowship. This work was carried out in part through the use of MIT.nano s characterization facilities. This work was supported in part by the Semiconductor Research Corporation (SRC) and DARPA. B.M. was supported by National Science Foundation under Grant No. DMR-2104912. The authors thank Frances M. Ross for helpful discussions on Scanning Transmission Electron Microscopy (STEM) imaging. E.P. and Q.W. acknowledge support from the MathWorks Fellowship. This work was carried out in part through the use of MIT.nano\u2019s characterization facilities.

Funders	Funder number
Semiconductor Research Corporation
Defense Advanced Research Projects Agency
National Science Foundation	DMR-2104912

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title = "Magnetic tunnel junctions featuring the topological Weyl semimetal Co2MnGa",

abstract = "Magnetic Weyl semimetals are promising materials for spintronic applications due to their unique properties in bulk and surface topological states and the rich interplay between band topology and magnetism. While various nontraditional magneto-electrical effects have been studied in magnetic Weyl semimetals, transport properties related to spin-polarized tunneling from these materials remain less explored. In this work, we developed fully epitaxial magnetic tunnel junctions (MTJs) based on a ferromagnetic Weyl semimetal Co2MnGa. By growing Co2MnGa films under different conditions, we fabricated a series of MTJs possessing different degrees of order in the semimetal electrodes and compared their tunneling magnetoresistance (TMR). We find that the TMR becomes enhanced with the improvement of the chemical ordering of Co2MnGa. Our results reveal the relationship between the spin tunneling in MTJs and the chemical order of the Co2MnGa electrode and provide insights on further enhancing TMR via semimetal engineering.",

author = "Zhiping He and Chou, {Chung Tao} and Eugene Park and Foucher, {Alexandre C.} and McGoldrick, {Brooke C.} and Qiuyuan Wang and Hou, {Justin T.} and Luqiao Liu",

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AU - He, Zhiping

AU - Chou, Chung Tao

AU - Park, Eugene

AU - Foucher, Alexandre C.

AU - McGoldrick, Brooke C.

AU - Wang, Qiuyuan

AU - Hou, Justin T.

AU - Liu, Luqiao

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N2 - Magnetic Weyl semimetals are promising materials for spintronic applications due to their unique properties in bulk and surface topological states and the rich interplay between band topology and magnetism. While various nontraditional magneto-electrical effects have been studied in magnetic Weyl semimetals, transport properties related to spin-polarized tunneling from these materials remain less explored. In this work, we developed fully epitaxial magnetic tunnel junctions (MTJs) based on a ferromagnetic Weyl semimetal Co2MnGa. By growing Co2MnGa films under different conditions, we fabricated a series of MTJs possessing different degrees of order in the semimetal electrodes and compared their tunneling magnetoresistance (TMR). We find that the TMR becomes enhanced with the improvement of the chemical ordering of Co2MnGa. Our results reveal the relationship between the spin tunneling in MTJs and the chemical order of the Co2MnGa electrode and provide insights on further enhancing TMR via semimetal engineering.

AB - Magnetic Weyl semimetals are promising materials for spintronic applications due to their unique properties in bulk and surface topological states and the rich interplay between band topology and magnetism. While various nontraditional magneto-electrical effects have been studied in magnetic Weyl semimetals, transport properties related to spin-polarized tunneling from these materials remain less explored. In this work, we developed fully epitaxial magnetic tunnel junctions (MTJs) based on a ferromagnetic Weyl semimetal Co2MnGa. By growing Co2MnGa films under different conditions, we fabricated a series of MTJs possessing different degrees of order in the semimetal electrodes and compared their tunneling magnetoresistance (TMR). We find that the TMR becomes enhanced with the improvement of the chemical ordering of Co2MnGa. Our results reveal the relationship between the spin tunneling in MTJs and the chemical order of the Co2MnGa electrode and provide insights on further enhancing TMR via semimetal engineering.

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Magnetic tunnel junctions featuring the topological Weyl semimetal Co2MnGa

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