Abstract
During the liquid-encapsulated Czochralski (LEC) process, a single compound semiconductor crystal such as indium phosphide or gallium antimonide is grown by the solidification of an initially molten semiconductor contained in a crucible. The motion of the electrically conducting molten semiconductor can be controlled with an externally applied magnetic field. This paper presents a model for the unsteady transport of a dopant during the LEC process with a steady axial magnetic field. The convective species transport during growth produces significant segregation in both the melt and the crystal. Dopant distributions in the crystal and in the melt at several different stages during growth are presented.
| Original language | English |
|---|---|
| Pages (from-to) | 174-182 |
| Number of pages | 9 |
| Journal | Journal of Crystal Growth |
| Volume | 250 |
| Issue number | 1-2 |
| DOIs | |
| State | Published - Mar 2003 |
| Externally published | Yes |
| Event | ACCGE-14 - Seatle, WA, United States Duration: Aug 4 2002 → Aug 9 2002 |
Funding
This research was supported by the National Aeronautics and Space Administration under grant NAG8-1817, by the US Air Force Office of Scientific Research, and by the NRC/USAF Office of Scientific Research Summer Faculty Fellowship Program. The calculations were performed on the IBM SP at the North Carolina Supercomputing Center in Research Triangle Park, NC.
Keywords
- A1. Magnetic fields
- A1. Mass transfer
- A1. Segregation
- A2. Growth from melt
- A2. Liquid encapsulated Czochralski method
- A2. Magnetic field assisted Czochralski method
- B2. Semiconducting III-V compounds