Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers

M. Wang; P. Wadley; R. P. Campion; A. W. Rushforth; K. W. Edmonds; B. L. Gallagher; T. R. Charlton; C. J. Kinane; S. Langridge

doi:10.1063/1.4928206

Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers

M. Wang, P. Wadley, R. P. Campion, A. W. Rushforth, K. W. Edmonds, B. L. Gallagher, T. R. Charlton, C. J. Kinane, S. Langridge

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1 Scopus citations

Abstract

We report on a study of ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers using magnetometry and polarized neutron reflectivity (PNR). From depth-resolved characterization of the magnetic structure obtained by PNR, we concluded that the (Ga,Mn)As and (Al,Ga,Mn)As layers have in-plane and perpendicular-to-plane magnetic easy axes, respectively, with weak interlayer coupling. Therefore, the layer magnetizations align perpendicular to each other under low magnetic fields and parallel at high fields.

Original language	English
Article number	053913
Journal	Journal of Applied Physics
Volume	118
Issue number	5
DOIs	https://doi.org/10.1063/1.4928206
State	Published - Aug 7 2015
Externally published	Yes

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@article{d829ceb7922f478a8a9caf9ca2e8a1a1,

title = "Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers",

abstract = "We report on a study of ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers using magnetometry and polarized neutron reflectivity (PNR). From depth-resolved characterization of the magnetic structure obtained by PNR, we concluded that the (Ga,Mn)As and (Al,Ga,Mn)As layers have in-plane and perpendicular-to-plane magnetic easy axes, respectively, with weak interlayer coupling. Therefore, the layer magnetizations align perpendicular to each other under low magnetic fields and parallel at high fields.",

author = "M. Wang and P. Wadley and Campion, \{R. P.\} and Rushforth, \{A. W.\} and Edmonds, \{K. W.\} and Gallagher, \{B. L.\} and Charlton, \{T. R.\} and Kinane, \{C. J.\} and S. Langridge",

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year = "2015",

month = aug,

day = "7",

doi = "10.1063/1.4928206",

language = "English",

volume = "118",

journal = "Journal of Applied Physics",

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TY - JOUR

T1 - Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers

AU - Wang, M.

AU - Wadley, P.

AU - Campion, R. P.

AU - Rushforth, A. W.

AU - Edmonds, K. W.

AU - Gallagher, B. L.

AU - Charlton, T. R.

AU - Kinane, C. J.

AU - Langridge, S.

PY - 2015/8/7

Y1 - 2015/8/7

N2 - We report on a study of ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers using magnetometry and polarized neutron reflectivity (PNR). From depth-resolved characterization of the magnetic structure obtained by PNR, we concluded that the (Ga,Mn)As and (Al,Ga,Mn)As layers have in-plane and perpendicular-to-plane magnetic easy axes, respectively, with weak interlayer coupling. Therefore, the layer magnetizations align perpendicular to each other under low magnetic fields and parallel at high fields.

AB - We report on a study of ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers using magnetometry and polarized neutron reflectivity (PNR). From depth-resolved characterization of the magnetic structure obtained by PNR, we concluded that the (Ga,Mn)As and (Al,Ga,Mn)As layers have in-plane and perpendicular-to-plane magnetic easy axes, respectively, with weak interlayer coupling. Therefore, the layer magnetizations align perpendicular to each other under low magnetic fields and parallel at high fields.

UR - https://www.scopus.com/pages/publications/84938808039

U2 - 10.1063/1.4928206

DO - 10.1063/1.4928206

M3 - Article

AN - SCOPUS:84938808039

SN - 0021-8979

VL - 118

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 5

M1 - 053913

ER -

Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers

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