@article{d829ceb7922f478a8a9caf9ca2e8a1a1,
title = "Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers",
abstract = "We report on a study of ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers using magnetometry and polarized neutron reflectivity (PNR). From depth-resolved characterization of the magnetic structure obtained by PNR, we concluded that the (Ga,Mn)As and (Al,Ga,Mn)As layers have in-plane and perpendicular-to-plane magnetic easy axes, respectively, with weak interlayer coupling. Therefore, the layer magnetizations align perpendicular to each other under low magnetic fields and parallel at high fields.",
author = "M. Wang and P. Wadley and Campion, {R. P.} and Rushforth, {A. W.} and Edmonds, {K. W.} and Gallagher, {B. L.} and Charlton, {T. R.} and Kinane, {C. J.} and S. Langridge",
note = "Publisher Copyright: {\textcopyright} 2015 AIP Publishing LLC.",
year = "2015",
month = aug,
day = "7",
doi = "10.1063/1.4928206",
language = "English",
volume = "118",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics",
number = "5",
}