Magnetic and transport properties of Mn3+x Ga1-x N compounds

W. J. Feng; D. Li; Y. F. Deng; Q. Zhang; H. H. Zhang; Z. D. Zhang

doi:10.1007/s10853-010-4265-2

Magnetic and transport properties of Mn_3+x Ga_1-x N compounds

W. J. Feng, D. Li, Y. F. Deng, Q. Zhang, H. H. Zhang, Z. D. Zhang

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Mn_3+x Ga_1-x N compounds with x = 0.0 and 0.1 were prepared by re-sintering Mn₂N_0.86, Ga bulk and Mn powders. These compounds are deduced to be the N-deficiency ones. In Mn₃GaN, a step-like magnetic transition, from frustrated antiferromagnetism to paramagnetism with increasing temperature, occurs at 370 K, while the same magnetic transition of Mn_3.1Ga_0.9N is far above 380 K. The enhanced magnetization of Mn₃GaN at low temperatures is ascribed to the fast lowering of antiferromagnetism. The electrical resistivity of Mn ₃GaN exhibits a typically metallic conducting behavior with a positive magnetoresistance of 4-7%.

Original language	English
Pages (from-to)	2770-2774
Number of pages	5
Journal	Journal of Materials Science
Volume	45
Issue number	10
DOIs	https://doi.org/10.1007/s10853-010-4265-2
State	Published - May 2010
Externally published	Yes

Funding

Acknowledgements This work has been supported by the National Natural Science Foundation of China under Grant No. 50332020, that of Liaoning Province under Grant No. 20072056, and the Open Fund of Laboratory Centre of Shenyang Normal University under No. SYZX01.

Funders	Funder number
Laboratory Centre of Shenyang Normal University	SYZX01
Liaoning Province	20072056
National Natural Science Foundation of China	50332020

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title = "Magnetic and transport properties of Mn3+x Ga1-x N compounds",

abstract = "Mn3+x Ga1-x N compounds with x = 0.0 and 0.1 were prepared by re-sintering Mn2N0.86, Ga bulk and Mn powders. These compounds are deduced to be the N-deficiency ones. In Mn3GaN, a step-like magnetic transition, from frustrated antiferromagnetism to paramagnetism with increasing temperature, occurs at 370 K, while the same magnetic transition of Mn3.1Ga0.9N is far above 380 K. The enhanced magnetization of Mn3GaN at low temperatures is ascribed to the fast lowering of antiferromagnetism. The electrical resistivity of Mn 3GaN exhibits a typically metallic conducting behavior with a positive magnetoresistance of 4-7%.",

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T1 - Magnetic and transport properties of Mn3+x Ga1-x N compounds

AU - Feng, W. J.

AU - Li, D.

AU - Deng, Y. F.

AU - Zhang, Q.

AU - Zhang, H. H.

AU - Zhang, Z. D.

PY - 2010/5

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N2 - Mn3+x Ga1-x N compounds with x = 0.0 and 0.1 were prepared by re-sintering Mn2N0.86, Ga bulk and Mn powders. These compounds are deduced to be the N-deficiency ones. In Mn3GaN, a step-like magnetic transition, from frustrated antiferromagnetism to paramagnetism with increasing temperature, occurs at 370 K, while the same magnetic transition of Mn3.1Ga0.9N is far above 380 K. The enhanced magnetization of Mn3GaN at low temperatures is ascribed to the fast lowering of antiferromagnetism. The electrical resistivity of Mn 3GaN exhibits a typically metallic conducting behavior with a positive magnetoresistance of 4-7%.

AB - Mn3+x Ga1-x N compounds with x = 0.0 and 0.1 were prepared by re-sintering Mn2N0.86, Ga bulk and Mn powders. These compounds are deduced to be the N-deficiency ones. In Mn3GaN, a step-like magnetic transition, from frustrated antiferromagnetism to paramagnetism with increasing temperature, occurs at 370 K, while the same magnetic transition of Mn3.1Ga0.9N is far above 380 K. The enhanced magnetization of Mn3GaN at low temperatures is ascribed to the fast lowering of antiferromagnetism. The electrical resistivity of Mn 3GaN exhibits a typically metallic conducting behavior with a positive magnetoresistance of 4-7%.

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Magnetic and transport properties of Mn_3+x Ga_1-x N compounds

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