Macrosegregation during directional solidification of alloyed semiconductor crystals with a transverse magnetic field

Joseph C. Dust, Nancy Ma

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper presents a model for the unsteady species transport during bulk growth of alloyed semiconductor crystals with a transverse magnetic field. During growth of alloyed semiconductors such as germanium-silicon (GeSi) and mercury-cadmiumtelluride (HgCdTe), the solute's concentration is not small so that density differences in the melt are very large. These compositional variations drive compositionally-driven buoyant convection, or solutal convection, in addition to thermally-driven buoyant convection. These buoyant convections drive convective transport which produces nonuniformities in the concentration in both the melt and the crystal. This transient model predicts the distribution of species in the entire crystal grown in a transverse magnetic field. This paper presents results of concentration in the crystal and in the melt at several different times during crystal growth.

Original languageEnglish
Title of host publication41st Aerospace Sciences Meeting and Exhibit
PublisherAmerican Institute of Aeronautics and Astronautics Inc.
ISBN (Print)9781624100994
DOIs
StatePublished - 2003
Externally publishedYes
Event41st Aerospace Sciences Meeting and Exhibit 2003 - Reno, NV, United States
Duration: Jan 6 2003Jan 9 2003

Publication series

Name41st Aerospace Sciences Meeting and Exhibit

Conference

Conference41st Aerospace Sciences Meeting and Exhibit 2003
Country/TerritoryUnited States
CityReno, NV
Period01/6/0301/9/03

Funding

FundersFunder number
National Aeronautics and Space Administration

    Fingerprint

    Dive into the research topics of 'Macrosegregation during directional solidification of alloyed semiconductor crystals with a transverse magnetic field'. Together they form a unique fingerprint.

    Cite this