Low temperature preparation of sol-gel PZT thin films for pyroelectric and other integrated devices

J. C. Gunter, S. K. Streiffer, A. I. Kingon

Research output: Contribution to conferencePaperpeer-review

Abstract

Thin films of lead zirconate titanate (PZT) were prepared using a modified sol-gel technique. The samples were annealed on a hotplate at 500 °C. The technique yields films crystallized into (111) textured perovskite. The ferroelectric properties of the best film gave a remnant polarization value of 20.0 μC/cm2 and coercive field of 44 kV/cm. The microstructure of the film was determined to be fine grained and columnar. Permittivity for the sample was determined to be 1100. Indications of factors influencing the lowering of crystallization temperatures were observed.

Original languageEnglish
Pages223-226
Number of pages4
StatePublished - 1996
Externally publishedYes
EventProceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2) - East Brunswick, NJ, USA
Duration: Aug 18 1996Aug 21 1996

Conference

ConferenceProceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2)
CityEast Brunswick, NJ, USA
Period08/18/9608/21/96

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