Low temperature photon-controlled growth of thin films and multilayered structures

D. H. Lowndes; D. B. Geohegan; D. Eres; S. J. Pennycook; D. N. Mashburn; G. E. Jellison

doi:10.1016/0169-4332(89)90899-4

Low temperature photon-controlled growth of thin films and multilayered structures

D. H. Lowndes, D. B. Geohegan, D. Eres, S. J. Pennycook, D. N. Mashburn, G. E. Jellison

Oak Ridge National Laboratory

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Pulsed ArF (193 nm) excimer laser photolysis of disilane, germane, and disilane-ammonia mixtures has been used to deposit amorphous superlattices containing silicon, germanium and silicon nitride layers. Transmission electron microscope cross-section views demonstrate that structures having thin (5-25 nm) layers and sharp interlayer boundaries can be deposited entirely under laser photolytic control, using low reactant gas partial pressures and with the excimer laser beam parallel to the substrate. Growth of epitaxial films and structures under similar conditions is discussed.

Original language	English
Pages (from-to)	59-69
Number of pages	11
Journal	Applied Surface Science
Volume	36
Issue number	1-4
DOIs	https://doi.org/10.1016/0169-4332(89)90899-4
State	Published - 1989

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@article{32564b4591cf4a189c4c0fc05c5c96e6,

title = "Low temperature photon-controlled growth of thin films and multilayered structures",

abstract = "Pulsed ArF (193 nm) excimer laser photolysis of disilane, germane, and disilane-ammonia mixtures has been used to deposit amorphous superlattices containing silicon, germanium and silicon nitride layers. Transmission electron microscope cross-section views demonstrate that structures having thin (5-25 nm) layers and sharp interlayer boundaries can be deposited entirely under laser photolytic control, using low reactant gas partial pressures and with the excimer laser beam parallel to the substrate. Growth of epitaxial films and structures under similar conditions is discussed.",

author = "Lowndes, {D. H.} and Geohegan, {D. B.} and D. Eres and Pennycook, {S. J.} and Mashburn, {D. N.} and Jellison, {G. E.}",

year = "1989",

doi = "10.1016/0169-4332(89)90899-4",

language = "English",

volume = "36",

pages = "59--69",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

number = "1-4",

}

TY - JOUR

T1 - Low temperature photon-controlled growth of thin films and multilayered structures

AU - Lowndes, D. H.

AU - Geohegan, D. B.

AU - Eres, D.

AU - Pennycook, S. J.

AU - Mashburn, D. N.

AU - Jellison, G. E.

PY - 1989

Y1 - 1989

N2 - Pulsed ArF (193 nm) excimer laser photolysis of disilane, germane, and disilane-ammonia mixtures has been used to deposit amorphous superlattices containing silicon, germanium and silicon nitride layers. Transmission electron microscope cross-section views demonstrate that structures having thin (5-25 nm) layers and sharp interlayer boundaries can be deposited entirely under laser photolytic control, using low reactant gas partial pressures and with the excimer laser beam parallel to the substrate. Growth of epitaxial films and structures under similar conditions is discussed.

AB - Pulsed ArF (193 nm) excimer laser photolysis of disilane, germane, and disilane-ammonia mixtures has been used to deposit amorphous superlattices containing silicon, germanium and silicon nitride layers. Transmission electron microscope cross-section views demonstrate that structures having thin (5-25 nm) layers and sharp interlayer boundaries can be deposited entirely under laser photolytic control, using low reactant gas partial pressures and with the excimer laser beam parallel to the substrate. Growth of epitaxial films and structures under similar conditions is discussed.

UR - http://www.scopus.com/inward/record.url?scp=0024301513&partnerID=8YFLogxK

U2 - 10.1016/0169-4332(89)90899-4

DO - 10.1016/0169-4332(89)90899-4

M3 - Article

AN - SCOPUS:0024301513

SN - 0169-4332

VL - 36

SP - 59

EP - 69

JO - Applied Surface Science

JF - Applied Surface Science

IS - 1-4

ER -

Low temperature photon-controlled growth of thin films and multilayered structures

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