Low-temperature Mo-catalyzed growth of crystalline Si3N4 by CVD

K. L. More; R. A. Lowden; T. M. Besmann

Low-temperature Mo-catalyzed growth of crystalline Si₃N₄ by CVD

K. L. More, R. A. Lowden, T. M. Besmann

Center for Nanophase Matls Sciences

Research output: Contribution to journal › Conference article › peer-review

Abstract

The use of MoCl₄ mixed to reactant gases SiCl₄, NH₃ and H₂ produced the codeposition of MoSi₄ and β-Si₃N₄ at 1150°C. The experiment was done in a cold wall CVD reactor and graphite substrates. Mo-catalyzed growth of crystalline Si₃N₄ and high deposition rates of Mo catalyzed growth proved to be favorable and practical. Addition of MoSi₂ also increases the oxidation resistance.

Original language	English
Pages (from-to)	918-919
Number of pages	2
Journal	Proceedings - Annual Meeting, Microscopy Society of America
State	Published - 1993
Event	Proceedings of the 51st Annual Meeting Microscopy Society of America - Cincinnati, OH, USA Duration: Aug 1 1993 → Aug 6 1993

Cite this

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title = "Low-temperature Mo-catalyzed growth of crystalline Si3N4 by CVD",

abstract = "The use of MoCl4 mixed to reactant gases SiCl4, NH3 and H2 produced the codeposition of MoSi4 and β-Si3N4 at 1150°C. The experiment was done in a cold wall CVD reactor and graphite substrates. Mo-catalyzed growth of crystalline Si3N4 and high deposition rates of Mo catalyzed growth proved to be favorable and practical. Addition of MoSi2 also increases the oxidation resistance.",

author = "More, {K. L.} and Lowden, {R. A.} and Besmann, {T. M.}",

year = "1993",

language = "English",

pages = "918--919",

journal = "Proceedings - Annual Meeting, Microscopy Society of America",

issn = "0424-8201",

note = "Proceedings of the 51st Annual Meeting Microscopy Society of America ; Conference date: 01-08-1993 Through 06-08-1993",

}

TY - JOUR

T1 - Low-temperature Mo-catalyzed growth of crystalline Si3N4 by CVD

AU - More, K. L.

AU - Lowden, R. A.

AU - Besmann, T. M.

PY - 1993

Y1 - 1993

N2 - The use of MoCl4 mixed to reactant gases SiCl4, NH3 and H2 produced the codeposition of MoSi4 and β-Si3N4 at 1150°C. The experiment was done in a cold wall CVD reactor and graphite substrates. Mo-catalyzed growth of crystalline Si3N4 and high deposition rates of Mo catalyzed growth proved to be favorable and practical. Addition of MoSi2 also increases the oxidation resistance.

AB - The use of MoCl4 mixed to reactant gases SiCl4, NH3 and H2 produced the codeposition of MoSi4 and β-Si3N4 at 1150°C. The experiment was done in a cold wall CVD reactor and graphite substrates. Mo-catalyzed growth of crystalline Si3N4 and high deposition rates of Mo catalyzed growth proved to be favorable and practical. Addition of MoSi2 also increases the oxidation resistance.

UR - http://www.scopus.com/inward/record.url?scp=0027708776&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0027708776

SN - 0424-8201

SP - 918

EP - 919

JO - Proceedings - Annual Meeting, Microscopy Society of America

JF - Proceedings - Annual Meeting, Microscopy Society of America

T2 - Proceedings of the 51st Annual Meeting Microscopy Society of America

Y2 - 1 August 1993 through 6 August 1993

ER -

Low-temperature Mo-catalyzed growth of crystalline Si₃N₄ by CVD

Abstract

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