Low temperature growth of boron nitride nanotubes on substrates

Jiesheng Wang; Vijaya K. Kayastha; Yoke Khin Yap; Zhiyong Fan; Jia G. Lu; Zhengwei Pan; Ilia N. Ivanov; Alex A. Puretzky; David B. Geohegan

doi:10.1021/nl051859n

Low temperature growth of boron nitride nanotubes on substrates

Jiesheng Wang, Vijaya K. Kayastha, Yoke Khin Yap, Zhiyong Fan, Jia G. Lu, Zhengwei Pan, Ilia N. Ivanov, Alex A. Puretzky, David B. Geohegan

Functional Hybrid Nanomaterials

Research output: Contribution to journal › Article › peer-review

175 Scopus citations

Abstract

High growth temperatures (>1100°C), low production yield, and impurities have prevented research progress and applications of boron nitride nanotubes (BNNTs) in the past 10 years. Here, we show that BNNTs can be grown on substrates at 600°C. These BNNTs are constructed of high-order tubular structures and can be used without purification. Tunneling spectroscopy indicates that their band gap ranges from 4.4 to 4.9 eV.

Original language	English
Pages (from-to)	2528-2532
Number of pages	5
Journal	Nano Letters
Volume	5
Issue number	12
DOIs	https://doi.org/10.1021/nl051859n
State	Published - Dec 2005

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abstract = "High growth temperatures (>1100°C), low production yield, and impurities have prevented research progress and applications of boron nitride nanotubes (BNNTs) in the past 10 years. Here, we show that BNNTs can be grown on substrates at 600°C. These BNNTs are constructed of high-order tubular structures and can be used without purification. Tunneling spectroscopy indicates that their band gap ranges from 4.4 to 4.9 eV.",

author = "Jiesheng Wang and Kayastha, {Vijaya K.} and Yap, {Yoke Khin} and Zhiyong Fan and Lu, {Jia G.} and Zhengwei Pan and Ivanov, {Ilia N.} and Puretzky, {Alex A.} and Geohegan, {David B.}",

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T1 - Low temperature growth of boron nitride nanotubes on substrates

AU - Wang, Jiesheng

AU - Kayastha, Vijaya K.

AU - Yap, Yoke Khin

AU - Fan, Zhiyong

AU - Lu, Jia G.

AU - Pan, Zhengwei

AU - Ivanov, Ilia N.

AU - Puretzky, Alex A.

AU - Geohegan, David B.

PY - 2005/12

Y1 - 2005/12

N2 - High growth temperatures (>1100°C), low production yield, and impurities have prevented research progress and applications of boron nitride nanotubes (BNNTs) in the past 10 years. Here, we show that BNNTs can be grown on substrates at 600°C. These BNNTs are constructed of high-order tubular structures and can be used without purification. Tunneling spectroscopy indicates that their band gap ranges from 4.4 to 4.9 eV.

AB - High growth temperatures (>1100°C), low production yield, and impurities have prevented research progress and applications of boron nitride nanotubes (BNNTs) in the past 10 years. Here, we show that BNNTs can be grown on substrates at 600°C. These BNNTs are constructed of high-order tubular structures and can be used without purification. Tunneling spectroscopy indicates that their band gap ranges from 4.4 to 4.9 eV.

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Low temperature growth of boron nitride nanotubes on substrates

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