Low Ohmic contact resistance and high on/off ratio in transition metal dichalcogenides field-effect transistors via residue-free transfer

Ashok Mondal, Chandan Biswas, Sehwan Park, Wujoon Cha, Seoung Hun Kang, Mina Yoon, Soo Ho Choi, Ki Kang Kim, Young Hee Lee

Research output: Contribution to journalArticlepeer-review

43 Scopus citations

Abstract

Beyond-silicon technology demands ultrahigh performance field-effect transistors. Transition metal dichalcogenides provide an ideal material platform, but the device performances such as the contact resistance, on/off ratio and mobility are often limited by the presence of interfacial residues caused by transfer procedures. Here, we show an ideal residue-free transfer approach using polypropylene carbonate with a negligible residue coverage of ~0.08% for monolayer MoS2 at the centimetre scale. By incorporating a bismuth semimetal contact with an atomically clean monolayer MoS2 field-effect transistor on hexagonal boron nitride substrate, we obtain an ultralow Ohmic contact resistance of ~78 Ω µm, approaching the quantum limit, and a record-high on/off ratio of ~1011 at 15 K. Such an ultra-clean fabrication approach could be the ideal platform for high-performance electrical devices using large-area semiconducting transition metal dichalcogenides.

Original languageEnglish
Pages (from-to)34-43
Number of pages10
JournalNature Nanotechnology
Volume19
Issue number1
DOIs
StatePublished - Jan 2024

Funding

This work was supported by the Institute for Basic Science of Korea (IBS-R011-D1) and Advanced Facility Center for Quantum Technology. A.M. and C.B. acknowledge P. Ghising for the scientific discussion. We acknowledge S. G. Lee for the training on the C-AFM instrument. Theory work was supported by the US Department of Energy (DOE), Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division (M.Y.) and by the DOE, Office of Science, National Quantum Information Science Research Centers, Quantum Science Center (S.-H.K.). This research used resources of the Oak Ridge Leadership Computing Facility at Oak Ridge National Laboratory, which is supported by the DOE Office of Science under contract no. DE-AC05-00OR22725, and resources of the National Energy Research Scientific Computing Center, a DOE Office of Science User Facility supported by the DOE Office of Science under contract no. DE-AC02-05CH11231, using National Energy Research Scientific Computing Center award BES-ERCAP0024568. K.K.K. acknowledges support from the Basic Science Research (2022R1A2C2091475) and Next-Generation Intelligence Semiconductor Program (2022M3F3A2A01072215) through the National Research Foundation of Korea, which is funded by the Ministry of Science, ICT and Future Planning.

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