Low frequency resistance and critical current fluctuations in Al-based Josephson junctions

C. D. Nugroho, V. Orlyanchik, D. J. Van Harlingen

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29 Scopus citations

Abstract

We present low-temperature measurements of the low-frequency 1/f noise arising from an ensemble of two-level fluctuators in the oxide barrier of Al/AlOx/Al Josephson junctions. The fractional noise power spectrum of the critical-current and normal-state resistance has similar magnitudes and scale linearly with temperature, implying an equivalence between the two. Compiling our results and published data, we deduce the area and temperature scaling of the noise for AlOx barrier junctions. We find that the density of two-level fluctuators in the junction barrier is similar to the typical value in glassy systems. We discuss the implications and consistency with recent qubit experiments.

Original languageEnglish
Article number142602
JournalApplied Physics Letters
Volume102
Issue number14
DOIs
StatePublished - Apr 8 2013
Externally publishedYes

Funding

This research was funded by the Office of the Director of National Intelligence (ODNI), Intelligence Advanced Research Projects Activity (IARPA), through the Army Research Office. All statements of fact, opinion, or conclusions contained herein are those of the authors and should not be construed as representing the official views or policies of IARPA, the ODNI, or the U.S. Government.

FundersFunder number
Army Research Office
Office of the Director of National Intelligence
Intelligence Advanced Research Projects Activity

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