Abstract
We performed 1-2 keV focused Au implants into Si, in which the depth was validated by atom-probe tomography. We show that identical results are achievable by either lowering the column voltage, or decelerating ions using bias - while maintaining nanoscale spatial resolution. Furthermore, our data reveal that standard implant modeling overestimates experimental depth by 4.7x and 3.8x at 1 and 2 keV respectively. Finally, we demonstrate how our results pave a way to eV-scale implantation energies, while maintaining high spatial resolution.
| Original language | English |
|---|---|
| Pages (from-to) | 1229-1230 |
| Number of pages | 2 |
| Journal | International Conference on Metamaterials, Photonic Crystals and Plasmonics |
| State | Published - 2023 |
| Event | 13th International Conference on Metamaterials, Photonic Crystals and Plasmonics, META 2023 - Paris, France Duration: Jul 18 2023 → Jul 21 2023 |
Funding
This work was performed, in part, at the Center for Integrated Nanotechnologies, an Office of Science User Facility operated for the U.S. Department of Energy (DOE) Office of Science. Sandia National Laboratories is a multimission laboratory managed and operated by National Technology & Engineering Solutions of Sandia, LLC, a wholly owned subsidiary of Honeywell International, Inc., for the U.S. DOE's National Nuclear Security Administration under contract DE-NA-0003525. APT research was supported by the Center for Nanophase Materials Sciences (CNMS), which is a US Department of Energy, Office of Science User Facility at Oak Ridge National Laboratory. The views expressed in the article do not necessarily represent the views of the U.S. DOE or the United States Government.