Loss modeling for SiC MOSFET inverters

Gui Jia Su

doi:10.1109/VPPC.2018.8604972

Loss modeling for SiC MOSFET inverters

Gui Jia Su

Electric Drives Research

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

9 Scopus citations

Abstract

The reverse-conduction capability of SiC MOSFETs can be used to further reduce inverter losses and increase efficiency. This paper presents analytical equations for modeling the reverse-conduction losses of SiC MOSFET inverters. The reverse conduction exhibits two loss mechanisms and they must be considered within a fundamental cycle. Loss modeling equations for various pulse width modulation schemes along with a comparison of loss reduction with these PWM methods are included.

Original language	English
Title of host publication	2018 IEEE Vehicle Power and Propulsion Conference, VPPC 2018 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781538662038
DOIs	https://doi.org/10.1109/VPPC.2018.8604972
State	Published - Jul 2 2018
Event	15th IEEE Vehicle Power and Propulsion Conference, VPPC 2018 - Chicago, United States Duration: Aug 27 2018 → Aug 30 2018

Publication series

Name	2018 IEEE Vehicle Power and Propulsion Conference, VPPC 2018 - Proceedings

Conference

Conference	15th IEEE Vehicle Power and Propulsion Conference, VPPC 2018
Country/Territory	United States
City	Chicago
Period	08/27/18 → 08/30/18

Funding

ACKNOWLEDGMENT This material is based upon work supported by the U.S. Department of Energy, Office of Energy Efficiency and Renewable Energy, Vehicle Technologies Office under contract number DE-AC05-00OR22725. The author thanks U.S. Department of Energy's Susan Rogers and Oak Ridge National Lab's Burak Ozpineci for their financial and managerial support. Notice: This manuscript has been authored by UT-Battelle, LLC, under Contract No. DE-AC0500OR22725 with the U.S. Department of Energy. The United States Government retains and the publisher, by accepting the article for publication, acknowledges that the United States Government retains a non-exclusive, paid-up, irrevocable, world-wide license to publish or reproduce the published form of this manuscript, or allow others to do so, for the United States Government purposes. The Department of Energy will provide public access to these results of federally sponsored research in accordance with the DOE Public Access Plan (http://energy.gov/downloads/doe-public-access-plan)..

Funders	Funder number
UT-Battelle
U.S. Department of Energy
Office of Energy Efficiency and Renewable Energy	DE-AC05-00OR22725

Keywords

Inverter losses
Loss modeling equations
PWM schemes
Reverse-conduction
SiC MOSFET

Access to Document

10.1109/VPPC.2018.8604972

Cite this

@inproceedings{05bd00a8fa934d4196996a52d694c7ce,

title = "Loss modeling for SiC MOSFET inverters",

abstract = "The reverse-conduction capability of SiC MOSFETs can be used to further reduce inverter losses and increase efficiency. This paper presents analytical equations for modeling the reverse-conduction losses of SiC MOSFET inverters. The reverse conduction exhibits two loss mechanisms and they must be considered within a fundamental cycle. Loss modeling equations for various pulse width modulation schemes along with a comparison of loss reduction with these PWM methods are included.",

keywords = "Inverter losses, Loss modeling equations, PWM schemes, Reverse-conduction, SiC MOSFET",

author = "Su, {Gui Jia}",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE; 15th IEEE Vehicle Power and Propulsion Conference, VPPC 2018 ; Conference date: 27-08-2018 Through 30-08-2018",

year = "2018",

month = jul,

day = "2",

doi = "10.1109/VPPC.2018.8604972",

language = "English",

series = "2018 IEEE Vehicle Power and Propulsion Conference, VPPC 2018 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2018 IEEE Vehicle Power and Propulsion Conference, VPPC 2018 - Proceedings",

}

Su, GJ 2018, Loss modeling for SiC MOSFET inverters. in 2018 IEEE Vehicle Power and Propulsion Conference, VPPC 2018 - Proceedings., 8604972, 2018 IEEE Vehicle Power and Propulsion Conference, VPPC 2018 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 15th IEEE Vehicle Power and Propulsion Conference, VPPC 2018, Chicago, United States, 08/27/18. https://doi.org/10.1109/VPPC.2018.8604972

Loss modeling for SiC MOSFET inverters. / Su, Gui Jia.
2018 IEEE Vehicle Power and Propulsion Conference, VPPC 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. 8604972 (2018 IEEE Vehicle Power and Propulsion Conference, VPPC 2018 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Loss modeling for SiC MOSFET inverters

AU - Su, Gui Jia

PY - 2018/7/2

Y1 - 2018/7/2

N2 - The reverse-conduction capability of SiC MOSFETs can be used to further reduce inverter losses and increase efficiency. This paper presents analytical equations for modeling the reverse-conduction losses of SiC MOSFET inverters. The reverse conduction exhibits two loss mechanisms and they must be considered within a fundamental cycle. Loss modeling equations for various pulse width modulation schemes along with a comparison of loss reduction with these PWM methods are included.

AB - The reverse-conduction capability of SiC MOSFETs can be used to further reduce inverter losses and increase efficiency. This paper presents analytical equations for modeling the reverse-conduction losses of SiC MOSFET inverters. The reverse conduction exhibits two loss mechanisms and they must be considered within a fundamental cycle. Loss modeling equations for various pulse width modulation schemes along with a comparison of loss reduction with these PWM methods are included.

KW - Inverter losses

KW - Loss modeling equations

KW - PWM schemes

KW - Reverse-conduction

KW - SiC MOSFET

UR - http://www.scopus.com/inward/record.url?scp=85061644143&partnerID=8YFLogxK

U2 - 10.1109/VPPC.2018.8604972

DO - 10.1109/VPPC.2018.8604972

M3 - Conference contribution

AN - SCOPUS:85061644143

T3 - 2018 IEEE Vehicle Power and Propulsion Conference, VPPC 2018 - Proceedings

BT - 2018 IEEE Vehicle Power and Propulsion Conference, VPPC 2018 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 15th IEEE Vehicle Power and Propulsion Conference, VPPC 2018

Y2 - 27 August 2018 through 30 August 2018

ER -

Loss modeling for SiC MOSFET inverters

Abstract

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