Local structure of In0.5Ga0.5As from joint high-resolution and differential pair distribution function analysis

V. Petkov; I. K. Jeong; F. Mohiuddin-Jacobs; Th Proffen; S. J.L. Billinge; W. Dmowski

doi:10.1063/1.373718

Local structure of In_0.5Ga_0.5As from joint high-resolution and differential pair distribution function analysis

V. Petkov, I. K. Jeong, F. Mohiuddin-Jacobs, Th Proffen, S. J.L. Billinge, W. Dmowski

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

High resolution total and indium differential atomic pair distribution functions (PDFs) for In_0.5Ga_0.5As alloys have been obtained by high energy and anomalous x-ray diffraction experiments, respectively. The first peak in the total PDF is resolved as a doublet due to the presence of two distinct bond lengths, In-As and Ga-As. The In differential PDF, which involves only atomic pairs containing In, yields chemical specific information and helps ease the structure data interpretation. Both PDFs have been fit with structure models and the way in that the underlying cubic zinc-blende lattice of In_0.5Ga_0.5As semiconductor alloy distorts locally to accommodate the distinct In-As and Ga-As bond lengths present has been quantified.

Original language	English
Pages (from-to)	665-672
Number of pages	8
Journal	Journal of Applied Physics
Volume	88
Issue number	2
DOIs	https://doi.org/10.1063/1.373718
State	Published - Jul 15 2000
Externally published	Yes

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title = "Local structure of In0.5Ga0.5As from joint high-resolution and differential pair distribution function analysis",

abstract = "High resolution total and indium differential atomic pair distribution functions (PDFs) for In0.5Ga0.5As alloys have been obtained by high energy and anomalous x-ray diffraction experiments, respectively. The first peak in the total PDF is resolved as a doublet due to the presence of two distinct bond lengths, In-As and Ga-As. The In differential PDF, which involves only atomic pairs containing In, yields chemical specific information and helps ease the structure data interpretation. Both PDFs have been fit with structure models and the way in that the underlying cubic zinc-blende lattice of In0.5Ga0.5As semiconductor alloy distorts locally to accommodate the distinct In-As and Ga-As bond lengths present has been quantified.",

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T1 - Local structure of In0.5Ga0.5As from joint high-resolution and differential pair distribution function analysis

AU - Petkov, V.

AU - Jeong, I. K.

AU - Mohiuddin-Jacobs, F.

AU - Proffen, Th

AU - Billinge, S. J.L.

AU - Dmowski, W.

PY - 2000/7/15

Y1 - 2000/7/15

N2 - High resolution total and indium differential atomic pair distribution functions (PDFs) for In0.5Ga0.5As alloys have been obtained by high energy and anomalous x-ray diffraction experiments, respectively. The first peak in the total PDF is resolved as a doublet due to the presence of two distinct bond lengths, In-As and Ga-As. The In differential PDF, which involves only atomic pairs containing In, yields chemical specific information and helps ease the structure data interpretation. Both PDFs have been fit with structure models and the way in that the underlying cubic zinc-blende lattice of In0.5Ga0.5As semiconductor alloy distorts locally to accommodate the distinct In-As and Ga-As bond lengths present has been quantified.

AB - High resolution total and indium differential atomic pair distribution functions (PDFs) for In0.5Ga0.5As alloys have been obtained by high energy and anomalous x-ray diffraction experiments, respectively. The first peak in the total PDF is resolved as a doublet due to the presence of two distinct bond lengths, In-As and Ga-As. The In differential PDF, which involves only atomic pairs containing In, yields chemical specific information and helps ease the structure data interpretation. Both PDFs have been fit with structure models and the way in that the underlying cubic zinc-blende lattice of In0.5Ga0.5As semiconductor alloy distorts locally to accommodate the distinct In-As and Ga-As bond lengths present has been quantified.

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Local structure of In_0.5Ga_0.5As from joint high-resolution and differential pair distribution function analysis

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