Lithiation of pure and methylated amorphous silicon: Monitoring by operando optical microscopy and ex situ atomic force microscopy

Yue Feng; Thuy Doan Trang Ngo; Marianthi Panagopoulou; Abdelhak Cheriet; Bon Min Koo; Catherine Henry-de-Villeneuve; Michel Rosso; François Ozanam

doi:10.1016/j.electacta.2019.02.016

Lithiation of pure and methylated amorphous silicon: Monitoring by operando optical microscopy and ex situ atomic force microscopy

Yue Feng, Thuy Doan Trang Ngo, Marianthi Panagopoulou, Abdelhak Cheriet, Bon Min Koo, Catherine Henry-de-Villeneuve, Michel Rosso, François Ozanam

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

Operando color microscopy and ex situ AFM were used to investigate the lithiation process in pure (a-Si:H) and methylated (a-Si _1-x (CH ₃ ) _x :H) amorphous silicon thin layers. Color analysis of optical images allows for monitoring thickness changes of a-Si:H layers. Unlike pure a-Si:H, the first lithiation of a-Si _1-x (CH ₃ ) _x :H is found to be spatially non-uniform: lithiation starts at a limited number of locations then expands radially, forming circular lithiation spots. The morphology of the lithiation spots and their evolution is accurately measured by ex situ AFM. A mechanism is proposed to explain this phenomenon, involving the high resistivity of methylated silicon and the existence of low-resistance point defects.

Original language	English
Pages (from-to)	249-258
Number of pages	10
Journal	Electrochimica Acta
Volume	302
DOIs	https://doi.org/10.1016/j.electacta.2019.02.016
State	Published - Apr 10 2019
Externally published	Yes

Funding

Délégation Générale de l’Armement ( DGA ) is gratefully acknowledged for financial support. This work has also been supported by a public grant overseen by the French National Research Agency (ANR) as part of the “Investissements d'Avenir” program ( Labex Charmmmat , ANR-11-LABX-0039 -grant). It was partially conducted in the frame of the TREND-X research program of Ecole Polytechnique, supported by Fondation de l'École Polytechnique .

Keywords

AFM
Amorphous silicon
Li-ion battery
Lithiation mechanism
Operando optical microscopy
Silicon anode

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10.1016/j.electacta.2019.02.016

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title = "Lithiation of pure and methylated amorphous silicon: Monitoring by operando optical microscopy and ex situ atomic force microscopy",

abstract = " Operando color microscopy and ex situ AFM were used to investigate the lithiation process in pure (a-Si:H) and methylated (a-Si 1-x (CH 3 ) x :H) amorphous silicon thin layers. Color analysis of optical images allows for monitoring thickness changes of a-Si:H layers. Unlike pure a-Si:H, the first lithiation of a-Si 1-x (CH 3 ) x :H is found to be spatially non-uniform: lithiation starts at a limited number of locations then expands radially, forming circular lithiation spots. The morphology of the lithiation spots and their evolution is accurately measured by ex situ AFM. A mechanism is proposed to explain this phenomenon, involving the high resistivity of methylated silicon and the existence of low-resistance point defects.",

keywords = "AFM, Amorphous silicon, Li-ion battery, Lithiation mechanism, Operando optical microscopy, Silicon anode",

author = "Yue Feng and Ngo, \{Thuy Doan Trang\} and Marianthi Panagopoulou and Abdelhak Cheriet and Koo, \{Bon Min\} and Catherine Henry-de-Villeneuve and Michel Rosso and Fran{\c c}ois Ozanam",

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year = "2019",

month = apr,

day = "10",

doi = "10.1016/j.electacta.2019.02.016",

language = "English",

volume = "302",

pages = "249--258",

journal = "Electrochimica Acta",

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TY - JOUR

T1 - Lithiation of pure and methylated amorphous silicon

T2 - Monitoring by operando optical microscopy and ex situ atomic force microscopy

AU - Feng, Yue

AU - Ngo, Thuy Doan Trang

AU - Panagopoulou, Marianthi

AU - Cheriet, Abdelhak

AU - Koo, Bon Min

AU - Henry-de-Villeneuve, Catherine

AU - Rosso, Michel

AU - Ozanam, François

PY - 2019/4/10

Y1 - 2019/4/10

N2 - Operando color microscopy and ex situ AFM were used to investigate the lithiation process in pure (a-Si:H) and methylated (a-Si 1-x (CH 3 ) x :H) amorphous silicon thin layers. Color analysis of optical images allows for monitoring thickness changes of a-Si:H layers. Unlike pure a-Si:H, the first lithiation of a-Si 1-x (CH 3 ) x :H is found to be spatially non-uniform: lithiation starts at a limited number of locations then expands radially, forming circular lithiation spots. The morphology of the lithiation spots and their evolution is accurately measured by ex situ AFM. A mechanism is proposed to explain this phenomenon, involving the high resistivity of methylated silicon and the existence of low-resistance point defects.

AB - Operando color microscopy and ex situ AFM were used to investigate the lithiation process in pure (a-Si:H) and methylated (a-Si 1-x (CH 3 ) x :H) amorphous silicon thin layers. Color analysis of optical images allows for monitoring thickness changes of a-Si:H layers. Unlike pure a-Si:H, the first lithiation of a-Si 1-x (CH 3 ) x :H is found to be spatially non-uniform: lithiation starts at a limited number of locations then expands radially, forming circular lithiation spots. The morphology of the lithiation spots and their evolution is accurately measured by ex situ AFM. A mechanism is proposed to explain this phenomenon, involving the high resistivity of methylated silicon and the existence of low-resistance point defects.

KW - AFM

KW - Amorphous silicon

KW - Li-ion battery

KW - Lithiation mechanism

KW - Operando optical microscopy

KW - Silicon anode

UR - https://www.scopus.com/pages/publications/85062150001

U2 - 10.1016/j.electacta.2019.02.016

DO - 10.1016/j.electacta.2019.02.016

M3 - Article

AN - SCOPUS:85062150001

SN - 0013-4686

VL - 302

SP - 249

EP - 258

JO - Electrochimica Acta

JF - Electrochimica Acta

ER -

Lithiation of pure and methylated amorphous silicon: Monitoring by operando optical microscopy and ex situ atomic force microscopy

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Keywords

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