Abstract
During the liquid-encapsulated Czochralski (LEC) process, a single compound semiconductor crystal such as gallium-antimonide (GaSb) is grown by the solidification of an initially molten semiconductor (melt) contained in a crucible. The motion of the electrically-conducting molten semiconductor can be controlled by an externally-applied magnetic field. A steady magnetic field provides an electromagnetic stabilization of the melt motion during the LEC process. This paper presents a model for the unsteady transport of a dopant during the LEC process under a strong steady magnetic field. Dopant distributions in the crystal and in the melt at several different stages during growth are presented.
| Original language | English |
|---|---|
| Pages (from-to) | 73-86 |
| Number of pages | 14 |
| Journal | Magnetohydrodynamics |
| Volume | 41 |
| Issue number | 1 |
| DOIs | |
| State | Published - 2005 |
| Externally published | Yes |
Funding
This research was supported by the NRC/USAF Office of Scientific Research Summer Faculty Fellowship and by the U. S. Air Force Office of Scientific Research. The calculations were performed on the Cray provided by the DoD High Performance Computing Modernization Program under grant AFSNH2487
| Funders | Funder number |
|---|---|
| NRC/USAF | |
| U.S. Department of Defense | AFSNH2487 |
| Air Force Office of Scientific Research | |
| National Research Council Sri Lanka |
