Linear magnetoresistance in the low-field limit in density-wave materials

Yejun Feng, Yishu Wang, D. M. Silevitch, J. Q. Yan, Riki Kobayashi, Masato Hedo, Takao Nakama, Yoshichika Onuki, A. V. Suslov, B. Mihaila, P. B. Littlewood, T. F. Rosenbaum

Research output: Contribution to journalArticlepeer-review

37 Scopus citations

Abstract

The magnetoresistance (MR) of a material is typically insensitive to reversing the applied field direction and varies quadratically with magnetic field in the low-field limit. Quantum effects, unusual topological band structures, and inhomogeneities that lead to wandering current paths can induce a cross-over from quadratic to linear MR with increasing magnetic field. Here we explore a series of metallic charge- and spin-density-wave systems that exhibit extremely large positive linear MR. By contrast to other linear MR mechanisms, this effect remains robust down to miniscule magnetic fields of tens of Oersted at low temperature. We frame an explanation of this phenomenon in a semiclassical narrative for a broad category of materials with partially gapped Fermi surfaces due to density waves.

Original languageEnglish
Pages (from-to)11201-11206
Number of pages6
JournalProceedings of the National Academy of Sciences of the United States of America
Volume166
Issue number23
DOIs
StatePublished - 2019

Keywords

  • Density-wave materials
  • Fermi surface
  • Linear magnetoresistance

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