@inproceedings{5aea7fcf671d42d18b1509c7744e39f1,
title = "Line edge roughness of high deprotection activation energy photoresist by using sub-millisecond post exposure bake",
abstract = "The semiconductor industry is facing serious challenges in LWR control at the node of 16nm feature size. One of the reasons that causes LWR is the acid diffusion during post-exposure bake of chemically amplified resists. Laser spike annealing was introduced as a post-exposure bake (PEB) step in order to solve the image blurring problem by rapidly heating up a resist system to hundreds of degrees and completing the PEB in the millisecond time frame. However, lacking detailed knowledge of chemistry and kinetics for laser PEB (l-PEB) becomes an obstacle for resist design. The photoresist we synthesized with high deprotection activation energy and low diffusion activation energy has proved to help reduce LER for l-PEB. This photoresist was compared to another classical DUV model resist in order to analyze the benefits of its chemical structure and reaction kinetics. The interpretation of LER and activation energy will help us to identify better possible resist materials for l-PEB.",
keywords = "Activation energy, Chemically amplified resist, Diffusion, Laser spike annealing, Line width roughness, Post exposure bake, Reaction kinetics",
author = "Jing Jiang and Byungki Jung and Thompson, \{Michael O.\} and Ober, \{Christopher K.\}",
year = "2013",
doi = "10.1117/12.2011667",
language = "English",
isbn = "9780819494641",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Advances in Resist Materials and Processing Technology XXX",
note = "Advances in Resist Materials and Processing Technology XXX ; Conference date: 25-02-2013 Through 27-02-2013",
}