Abstract
The unique physical properties of two-dimensional (2D) metal halide perovskites (MHPs) such as nonlinear optics, anisotropic charge transport, and ferroelectricity have made these materials promising candidates for multifunctional applications. Recently, fluorine derivatives such as 4,4-difluoropiperidinium lead iodide perovskite or (4,4-DFPD, C5H10F2N)2PbI4 have shown strong ferroelectricity as compared to other 2D MHPs. Although it was previously addressed that the ferroelectricity in MHPs can be affected by illumination, the underlying physical mechanisms of light-ferroelectricity interaction in 2D MHPs are still lacking. Here, we explore the electromechanical responses in 4,4-(DFPD)2PbI4 thin films using advanced scanning probe microscopy techniques revealing ferroelectric domain structures. Hysteretic ferroelectric loops measured by contact-Kelvin probe force microscopy are dependent on domain structures under dark conditions, while ferroelectricity weakens under illumination. The X-ray diffraction patterns exhibit significant changes in preferential orientation of individual lattice planes under illumination. Particularly, the reduced intensity of the (1 1 1) lattice plane under illumination leads to transitioning from a ferroelectric to a paraelectric phase. The instability of positive ions, especially molecular organic cations, is observed under illumination by time-of-flight secondary ion mass spectrometry.
Original language | English |
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Pages (from-to) | 10120-10131 |
Number of pages | 12 |
Journal | Journal of Materials Chemistry A |
Volume | 10 |
Issue number | 18 |
DOIs | |
State | Published - Apr 11 2022 |
Funding
M. A. acknowledges support from the National Science Foundation (NSF), Award Number # 2043205. D. K. and M. A. acknowledge support from the University of Tennessee and CNMS user facility, project # CNMS2021-A-00706. The ToF-SIMS measurements were conducted and supported (A. V. I, O. S. O, S. V. K.) by the Center for Nanophase Materials Science (CNMS), which is a DOE Office of Science User Facility. O. S. O. was supported through the DOE Office of Science Research Program for Microelectronics Codesign (sponsored by ASCR, BES, HEP, NP, and FES) through the Abisko Project, PM Robinson Pino (ASCR). S. V. K. acknowledges the support of the 3DFeM EFRC center. XRD was performed at the Institute for Advanced Materials and Manufacturing (IAMM) Diffraction Facility, located at the University of Tennessee, Knoxville.