Leakage currents in CVD (Ba,Sr)TiO3 thin films

C. Basceri; S. K. Streiffer; A. I. Kingon; S. Bilodeau; R. Carl; P. C. van Buskirk; S. R. Summerfelt; P. McIntyre; R. Waser

doi:10.1557/proc-433-285

Leakage currents in CVD (Ba,Sr)TiO₃ thin films

C. Basceri
, S. K. Streiffer
, A. I. Kingon
, S. Bilodeau
, R. Carl
, P. C. van Buskirk
, S. R. Summerfelt
, P. McIntyre
, R. Waser

Research output: Contribution to journal › Conference article › peer-review

19 Scopus citations

Abstract

We have analyzed the leakage behavior of polycrystalline MOCVD (Ba,Sr)TiO₃ thin films as a function of both temperature and field. Of the possible mechanisms, thermionic (Schottky) emission gives a self-consistent description of the temperature and field dependencies of the true leakage current for fields in the range of 240-970 kW/cm, and yields realistic barrier heights of 1.2 eV for Pt as the cathode material. For film thicknesses of interest for use in DRAMs, the capacitance-voltage characteristics are explained via Landau-Ginzburg-Devonshire theory. Preliminary resistance degradation studies are also discussed.

Original language	English
Pages (from-to)	285-290
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	433
DOIs	https://doi.org/10.1557/proc-433-285
State	Published - 1996
Externally published	Yes
Event	Proceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA Duration: Apr 8 1996 → Apr 12 1996

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@article{eda388e2f30e4708a24e047aa72323c8,

title = "Leakage currents in CVD (Ba,Sr)TiO3 thin films",

abstract = "We have analyzed the leakage behavior of polycrystalline MOCVD (Ba,Sr)TiO3 thin films as a function of both temperature and field. Of the possible mechanisms, thermionic (Schottky) emission gives a self-consistent description of the temperature and field dependencies of the true leakage current for fields in the range of 240-970 kW/cm, and yields realistic barrier heights of 1.2 eV for Pt as the cathode material. For film thicknesses of interest for use in DRAMs, the capacitance-voltage characteristics are explained via Landau-Ginzburg-Devonshire theory. Preliminary resistance degradation studies are also discussed.",

author = "C. Basceri and Streiffer, \{S. K.\} and Kingon, \{A. I.\} and S. Bilodeau and R. Carl and \{van Buskirk\}, \{P. C.\} and Summerfelt, \{S. R.\} and P. McIntyre and R. Waser",

year = "1996",

doi = "10.1557/proc-433-285",

language = "English",

volume = "433",

pages = "285--290",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

note = "Proceedings of the 1996 MRS Spring Symposium ; Conference date: 08-04-1996 Through 12-04-1996",

}

TY - JOUR

T1 - Leakage currents in CVD (Ba,Sr)TiO3 thin films

AU - Basceri, C.

AU - Streiffer, S. K.

AU - Kingon, A. I.

AU - Bilodeau, S.

AU - Carl, R.

AU - van Buskirk, P. C.

AU - Summerfelt, S. R.

AU - McIntyre, P.

AU - Waser, R.

PY - 1996

Y1 - 1996

N2 - We have analyzed the leakage behavior of polycrystalline MOCVD (Ba,Sr)TiO3 thin films as a function of both temperature and field. Of the possible mechanisms, thermionic (Schottky) emission gives a self-consistent description of the temperature and field dependencies of the true leakage current for fields in the range of 240-970 kW/cm, and yields realistic barrier heights of 1.2 eV for Pt as the cathode material. For film thicknesses of interest for use in DRAMs, the capacitance-voltage characteristics are explained via Landau-Ginzburg-Devonshire theory. Preliminary resistance degradation studies are also discussed.

AB - We have analyzed the leakage behavior of polycrystalline MOCVD (Ba,Sr)TiO3 thin films as a function of both temperature and field. Of the possible mechanisms, thermionic (Schottky) emission gives a self-consistent description of the temperature and field dependencies of the true leakage current for fields in the range of 240-970 kW/cm, and yields realistic barrier heights of 1.2 eV for Pt as the cathode material. For film thicknesses of interest for use in DRAMs, the capacitance-voltage characteristics are explained via Landau-Ginzburg-Devonshire theory. Preliminary resistance degradation studies are also discussed.

UR - https://www.scopus.com/pages/publications/0030410703

U2 - 10.1557/proc-433-285

DO - 10.1557/proc-433-285

M3 - Conference article

AN - SCOPUS:0030410703

SN - 0272-9172

VL - 433

SP - 285

EP - 290

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1996 MRS Spring Symposium

Y2 - 8 April 1996 through 12 April 1996

ER -

Leakage currents in CVD (Ba,Sr)TiO₃ thin films

Abstract

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