TY - JOUR
T1 - Leakage currents in CVD (Ba,Sr)TiO3 thin films
AU - Basceri, C.
AU - Streiffer, S. K.
AU - Kingon, A. I.
AU - Bilodeau, S.
AU - Carl, R.
AU - van Buskirk, P. C.
AU - Summerfelt, S. R.
AU - McIntyre, P.
AU - Waser, R.
PY - 1996
Y1 - 1996
N2 - We have analyzed the leakage behavior of polycrystalline MOCVD (Ba,Sr)TiO3 thin films as a function of both temperature and field. Of the possible mechanisms, thermionic (Schottky) emission gives a self-consistent description of the temperature and field dependencies of the true leakage current for fields in the range of 240-970 kW/cm, and yields realistic barrier heights of 1.2 eV for Pt as the cathode material. For film thicknesses of interest for use in DRAMs, the capacitance-voltage characteristics are explained via Landau-Ginzburg-Devonshire theory. Preliminary resistance degradation studies are also discussed.
AB - We have analyzed the leakage behavior of polycrystalline MOCVD (Ba,Sr)TiO3 thin films as a function of both temperature and field. Of the possible mechanisms, thermionic (Schottky) emission gives a self-consistent description of the temperature and field dependencies of the true leakage current for fields in the range of 240-970 kW/cm, and yields realistic barrier heights of 1.2 eV for Pt as the cathode material. For film thicknesses of interest for use in DRAMs, the capacitance-voltage characteristics are explained via Landau-Ginzburg-Devonshire theory. Preliminary resistance degradation studies are also discussed.
UR - https://www.scopus.com/pages/publications/0030410703
U2 - 10.1557/proc-433-285
DO - 10.1557/proc-433-285
M3 - Conference article
AN - SCOPUS:0030410703
SN - 0272-9172
VL - 433
SP - 285
EP - 290
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
T2 - Proceedings of the 1996 MRS Spring Symposium
Y2 - 8 April 1996 through 12 April 1996
ER -