Layer-by-Layer Thinning of PdSe2 Flakes via Plasma Induced Oxidation and Sublimation

Anna N. Hoffman; Yiyi Gu; Justin Tokash; Jonathan Woodward; Kai Xiao; Philip D. Rack

doi:10.1021/acsami.9b21287

Layer-by-Layer Thinning of PdSe₂ Flakes via Plasma Induced Oxidation and Sublimation

Anna N. Hoffman, Yiyi Gu, Justin Tokash, Jonathan Woodward, Kai Xiao, Philip D. Rack

Functional Hybrid Nanomaterials

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

Controlled O₂/Ar plasma exposure and subsequent low temperature inert atmosphere annealing of chemical vapor deposition (CVD) grown PdSe₂ flakes etch PdSe₂ layer-by-layer in an atomic layer etching-like (ALE) process. X-ray photoelectron spectroscopy (XPS) shows that exposure to a remote inductively coupled plasma (ICP) oxygen plasma oxidizes the top layer of the PdSe₂ to form PdO₂ and SeO₂. After an in situ annealing, XPS shows no trace of PdO₂ or SeO₂, suggesting the byproducts are volatile at low temperature. Atomic force microscopy of PdSe₂ exposed to various O₂ + Ar plasmas (O₂ = 25-100%) demonstrates a clear trend between the oxygen concentration and the number of layers etched per cycle. PdSe₂ field effect transistors (FETs) were characterized at various stages of two ALE-like cycles, and the electrical properties are correlated to the oxidation and byproduct desorption and layer reduction.

Original language	English
Pages (from-to)	7345-7350
Number of pages	6
Journal	ACS Applied Materials and Interfaces
Volume	12
Issue number	6
DOIs	https://doi.org/10.1021/acsami.9b21287
State	Published - Feb 12 2020

Funding

Research conducted at Oak Ridge National Laboratory’s Center for Nanophase Materials Sciences, which is a U.S. Department of Energy Office of Science User Facility, which supported the plasma processing development, device synthesis and characterization measurements (A.N.H. and P.D.R.). Synthesis of the PdSe2 crystals (Y.G. and K.X.) supported by U.S. Department of Energy (DOE), Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division. ANH also acknowledges supplemental support via a fellowship sponsored by the Center for Materials Processing at the University of Tennessee.

Keywords

2D materials
PdSe
atomic layer etching
etching
field effect transistor
transition metal dichalcogenide

Access to Document

10.1021/acsami.9b21287

Cite this

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title = "Layer-by-Layer Thinning of PdSe2 Flakes via Plasma Induced Oxidation and Sublimation",

abstract = "Controlled O2/Ar plasma exposure and subsequent low temperature inert atmosphere annealing of chemical vapor deposition (CVD) grown PdSe2 flakes etch PdSe2 layer-by-layer in an atomic layer etching-like (ALE) process. X-ray photoelectron spectroscopy (XPS) shows that exposure to a remote inductively coupled plasma (ICP) oxygen plasma oxidizes the top layer of the PdSe2 to form PdO2 and SeO2. After an in situ annealing, XPS shows no trace of PdO2 or SeO2, suggesting the byproducts are volatile at low temperature. Atomic force microscopy of PdSe2 exposed to various O2 + Ar plasmas (O2 = 25-100%) demonstrates a clear trend between the oxygen concentration and the number of layers etched per cycle. PdSe2 field effect transistors (FETs) were characterized at various stages of two ALE-like cycles, and the electrical properties are correlated to the oxidation and byproduct desorption and layer reduction.",

keywords = "2D materials, PdSe, atomic layer etching, etching, field effect transistor, transition metal dichalcogenide",

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AU - Hoffman, Anna N.

AU - Gu, Yiyi

AU - Tokash, Justin

AU - Woodward, Jonathan

AU - Xiao, Kai

AU - Rack, Philip D.

PY - 2020/2/12

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N2 - Controlled O2/Ar plasma exposure and subsequent low temperature inert atmosphere annealing of chemical vapor deposition (CVD) grown PdSe2 flakes etch PdSe2 layer-by-layer in an atomic layer etching-like (ALE) process. X-ray photoelectron spectroscopy (XPS) shows that exposure to a remote inductively coupled plasma (ICP) oxygen plasma oxidizes the top layer of the PdSe2 to form PdO2 and SeO2. After an in situ annealing, XPS shows no trace of PdO2 or SeO2, suggesting the byproducts are volatile at low temperature. Atomic force microscopy of PdSe2 exposed to various O2 + Ar plasmas (O2 = 25-100%) demonstrates a clear trend between the oxygen concentration and the number of layers etched per cycle. PdSe2 field effect transistors (FETs) were characterized at various stages of two ALE-like cycles, and the electrical properties are correlated to the oxidation and byproduct desorption and layer reduction.

AB - Controlled O2/Ar plasma exposure and subsequent low temperature inert atmosphere annealing of chemical vapor deposition (CVD) grown PdSe2 flakes etch PdSe2 layer-by-layer in an atomic layer etching-like (ALE) process. X-ray photoelectron spectroscopy (XPS) shows that exposure to a remote inductively coupled plasma (ICP) oxygen plasma oxidizes the top layer of the PdSe2 to form PdO2 and SeO2. After an in situ annealing, XPS shows no trace of PdO2 or SeO2, suggesting the byproducts are volatile at low temperature. Atomic force microscopy of PdSe2 exposed to various O2 + Ar plasmas (O2 = 25-100%) demonstrates a clear trend between the oxygen concentration and the number of layers etched per cycle. PdSe2 field effect transistors (FETs) were characterized at various stages of two ALE-like cycles, and the electrical properties are correlated to the oxidation and byproduct desorption and layer reduction.

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