Lateral Magnetically Modulated Multilayers by Combining Ion Implantation and Lithography

Enric Menéndez; Hiwa Modarresi; Claire Petermann; Josep Nogués; Neus Domingo; Haoliang Liu; Brian J. Kirby; Amir Syed Mohd; Zahir Salhi; Earl Babcock; Stefan Mattauch; Chris Van Haesendonck; André Vantomme; Kristiaan Temst

doi:10.1002/smll.201603465

Lateral Magnetically Modulated Multilayers by Combining Ion Implantation and Lithography

Enric Menéndez, Hiwa Modarresi, Claire Petermann, Josep Nogués, Neus Domingo, Haoliang Liu, Brian J. Kirby, Amir Syed Mohd, Zahir Salhi, Earl Babcock, Stefan Mattauch, Chris Van Haesendonck, André Vantomme, Kristiaan Temst

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11 Scopus citations

Abstract

The combination of lithography and ion implantation is demonstrated to be a suitable method to prepare lateral multilayers. A laterally, compositionally, and magnetically modulated microscale pattern consisting of alternating Co (1.6 µm wide) and Co-CoO (2.4 µm wide) lines has been obtained by oxygen ion implantation into a lithographically masked Au-sandwiched Co thin film. Magnetoresistance along the lines (i.e., current and applied magnetic field are parallel to the lines) reveals an effective positive giant magnetoresistance (GMR) behavior at room temperature. Conversely, anisotropic magnetoresistance and GMR contributions are distinguished at low temperature (i.e., 10 K) since the O-implanted areas become exchange coupled. This planar GMR is principally ascribed to the spatial modulation of coercivity in a spring-magnet-type configuration, which results in 180° Néel extrinsic domain walls at the Co/Co-CoO interfaces. The versatility, in terms of pattern size, morphology, and composition adjustment, of this method offers a unique route to fabricate planar systems for, among others, spintronic research and applications.

Original language	English
Article number	1603465
Journal	Small
Volume	13
Issue number	11
DOIs	https://doi.org/10.1002/smll.201603465
State	Published - Mar 21 2017
Externally published	Yes

Funding

This work was financed by the Research Foundation-Flanders (FWO), the Concerted Research ActionGOA/14/007, the 2014-SGR-1015 project of the Generalitat de Catalunya, and the European Commission under the 7th Framework Programme through the “Research Infrastructure” action of the “Capacities” Programme, NMI3-II Grant No. 283883. This work is based upon experiments (Proposal Nos. 5928 and 9384) performed at the MARIA instrument operated by JCNS at Heinz Maier-Leibnitz Zentrum (MLZ), Garching, Germany. The authors would like to thank IMEC for access to its lithography facilities as well as J. Moonens and J. Loo for technical support. ICN2 acknowledges support from the Severo Ochoa Program (MINECO, Grant SEV-2013-0295). Finally, the authors thank J. A. Borchers and B. B. Maranville for fruitful discussions and J. England of Applied Materials (UK) for the assistance in performing the TRIDYN simulations.

Keywords

ion implantation
lateral multilayers
lithography
magnetoresistance
planar technology

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title = "Lateral Magnetically Modulated Multilayers by Combining Ion Implantation and Lithography",

abstract = "The combination of lithography and ion implantation is demonstrated to be a suitable method to prepare lateral multilayers. A laterally, compositionally, and magnetically modulated microscale pattern consisting of alternating Co (1.6 µm wide) and Co-CoO (2.4 µm wide) lines has been obtained by oxygen ion implantation into a lithographically masked Au-sandwiched Co thin film. Magnetoresistance along the lines (i.e., current and applied magnetic field are parallel to the lines) reveals an effective positive giant magnetoresistance (GMR) behavior at room temperature. Conversely, anisotropic magnetoresistance and GMR contributions are distinguished at low temperature (i.e., 10 K) since the O-implanted areas become exchange coupled. This planar GMR is principally ascribed to the spatial modulation of coercivity in a spring-magnet-type configuration, which results in 180° N{\'e}el extrinsic domain walls at the Co/Co-CoO interfaces. The versatility, in terms of pattern size, morphology, and composition adjustment, of this method offers a unique route to fabricate planar systems for, among others, spintronic research and applications.",

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author = "Enric Men{\'e}ndez and Hiwa Modarresi and Claire Petermann and Josep Nogu{\'e}s and Neus Domingo and Haoliang Liu and Kirby, {Brian J.} and Mohd, {Amir Syed} and Zahir Salhi and Earl Babcock and Stefan Mattauch and {Van Haesendonck}, Chris and Andr{\'e} Vantomme and Kristiaan Temst",

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AU - Menéndez, Enric

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AU - Petermann, Claire

AU - Nogués, Josep

AU - Domingo, Neus

AU - Liu, Haoliang

AU - Kirby, Brian J.

AU - Mohd, Amir Syed

AU - Salhi, Zahir

AU - Babcock, Earl

AU - Mattauch, Stefan

AU - Van Haesendonck, Chris

AU - Vantomme, André

AU - Temst, Kristiaan

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N2 - The combination of lithography and ion implantation is demonstrated to be a suitable method to prepare lateral multilayers. A laterally, compositionally, and magnetically modulated microscale pattern consisting of alternating Co (1.6 µm wide) and Co-CoO (2.4 µm wide) lines has been obtained by oxygen ion implantation into a lithographically masked Au-sandwiched Co thin film. Magnetoresistance along the lines (i.e., current and applied magnetic field are parallel to the lines) reveals an effective positive giant magnetoresistance (GMR) behavior at room temperature. Conversely, anisotropic magnetoresistance and GMR contributions are distinguished at low temperature (i.e., 10 K) since the O-implanted areas become exchange coupled. This planar GMR is principally ascribed to the spatial modulation of coercivity in a spring-magnet-type configuration, which results in 180° Néel extrinsic domain walls at the Co/Co-CoO interfaces. The versatility, in terms of pattern size, morphology, and composition adjustment, of this method offers a unique route to fabricate planar systems for, among others, spintronic research and applications.

AB - The combination of lithography and ion implantation is demonstrated to be a suitable method to prepare lateral multilayers. A laterally, compositionally, and magnetically modulated microscale pattern consisting of alternating Co (1.6 µm wide) and Co-CoO (2.4 µm wide) lines has been obtained by oxygen ion implantation into a lithographically masked Au-sandwiched Co thin film. Magnetoresistance along the lines (i.e., current and applied magnetic field are parallel to the lines) reveals an effective positive giant magnetoresistance (GMR) behavior at room temperature. Conversely, anisotropic magnetoresistance and GMR contributions are distinguished at low temperature (i.e., 10 K) since the O-implanted areas become exchange coupled. This planar GMR is principally ascribed to the spatial modulation of coercivity in a spring-magnet-type configuration, which results in 180° Néel extrinsic domain walls at the Co/Co-CoO interfaces. The versatility, in terms of pattern size, morphology, and composition adjustment, of this method offers a unique route to fabricate planar systems for, among others, spintronic research and applications.

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Lateral Magnetically Modulated Multilayers by Combining Ion Implantation and Lithography

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