Laser photochemical vapor deposition

J. G. Eden; K. K. King; E. A.P. Cheng; S. A. Piette; D. B. Geohegan

doi:10.1117/12.937295

Laser photochemical vapor deposition

J. G. Eden, K. K. King, E. A.P. Cheng, S. A. Piette, D. B. Geohegan

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Abstract

A brief overview of the status of laser photochemical vapor deposition (LPVD) will be given, with emphasis on large area processing. Recent experiments, in which chemical vapor deposition of Ge (or Si) has been “triggered” by ultraviolet (UV) laser photodissociation of GeH₄ (or Si₂H₆), are described.

Original language	English
Pages (from-to)	43-45
Number of pages	3
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	710
DOIs	https://doi.org/10.1117/12.937295
State	Published - Mar 11 1987
Externally published	Yes

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title = "Laser photochemical vapor deposition",

abstract = "A brief overview of the status of laser photochemical vapor deposition (LPVD) will be given, with emphasis on large area processing. Recent experiments, in which chemical vapor deposition of Ge (or Si) has been “triggered” by ultraviolet (UV) laser photodissociation of GeH4 (or Si2H6), are described.",

author = "Eden, \{J. G.\} and King, \{K. K.\} and Cheng, \{E. A.P.\} and Piette, \{S. A.\} and Geohegan, \{D. B.\}",

year = "1987",

month = mar,

day = "11",

doi = "10.1117/12.937295",

language = "English",

volume = "710",

pages = "43--45",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "Society of Photo-Optical Instrumentation Engineers",

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T1 - Laser photochemical vapor deposition

AU - Eden, J. G.

AU - King, K. K.

AU - Cheng, E. A.P.

AU - Piette, S. A.

AU - Geohegan, D. B.

PY - 1987/3/11

Y1 - 1987/3/11

N2 - A brief overview of the status of laser photochemical vapor deposition (LPVD) will be given, with emphasis on large area processing. Recent experiments, in which chemical vapor deposition of Ge (or Si) has been “triggered” by ultraviolet (UV) laser photodissociation of GeH4 (or Si2H6), are described.

AB - A brief overview of the status of laser photochemical vapor deposition (LPVD) will be given, with emphasis on large area processing. Recent experiments, in which chemical vapor deposition of Ge (or Si) has been “triggered” by ultraviolet (UV) laser photodissociation of GeH4 (or Si2H6), are described.

UR - https://www.scopus.com/pages/publications/0023585827

U2 - 10.1117/12.937295

DO - 10.1117/12.937295

M3 - Article

AN - SCOPUS:0023585827

SN - 0277-786X

VL - 710

SP - 43

EP - 45

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

ER -

Laser photochemical vapor deposition

Abstract

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