Laser-induced amorphization of silicon during pulsed-laser irradiation of Tin/Ti/polycrystalline silicon/SiO2/silicon

Y. F. Chong; K. L. Pey; A. T.S. Wee; M. O. Thompson; C. H. Tung; A. See

doi:10.1063/1.1521579

Laser-induced amorphization of silicon during pulsed-laser irradiation of Tin/Ti/polycrystalline silicon/SiO₂/silicon

Y. F. Chong
, K. L. Pey
, A. T.S. Wee
, M. O. Thompson
, C. H. Tung
, A. See

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

A report on the complex solidification structures formed during laser thermal processing (LTP) of a titanium nitride/titanium/polycrystalline silicon/silicon dioxide/silicon film stack was presented. The titanium atoms were found to diffuse through the entire polycrystalline silicon layer during irradiation. The results showed that a thick a-Si layer was formed upon LTP in the presence of titanium.

Original language	English
Pages (from-to)	3786-3788
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	20
DOIs	https://doi.org/10.1063/1.1521579
State	Published - Nov 11 2002
Externally published	Yes

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title = "Laser-induced amorphization of silicon during pulsed-laser irradiation of Tin/Ti/polycrystalline silicon/SiO2/silicon",

abstract = "A report on the complex solidification structures formed during laser thermal processing (LTP) of a titanium nitride/titanium/polycrystalline silicon/silicon dioxide/silicon film stack was presented. The titanium atoms were found to diffuse through the entire polycrystalline silicon layer during irradiation. The results showed that a thick a-Si layer was formed upon LTP in the presence of titanium.",

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doi = "10.1063/1.1521579",

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T1 - Laser-induced amorphization of silicon during pulsed-laser irradiation of Tin/Ti/polycrystalline silicon/SiO2/silicon

AU - Chong, Y. F.

AU - Pey, K. L.

AU - Wee, A. T.S.

AU - Thompson, M. O.

AU - Tung, C. H.

AU - See, A.

PY - 2002/11/11

Y1 - 2002/11/11

N2 - A report on the complex solidification structures formed during laser thermal processing (LTP) of a titanium nitride/titanium/polycrystalline silicon/silicon dioxide/silicon film stack was presented. The titanium atoms were found to diffuse through the entire polycrystalline silicon layer during irradiation. The results showed that a thick a-Si layer was formed upon LTP in the presence of titanium.

AB - A report on the complex solidification structures formed during laser thermal processing (LTP) of a titanium nitride/titanium/polycrystalline silicon/silicon dioxide/silicon film stack was presented. The titanium atoms were found to diffuse through the entire polycrystalline silicon layer during irradiation. The results showed that a thick a-Si layer was formed upon LTP in the presence of titanium.

UR - https://www.scopus.com/pages/publications/0037065117

U2 - 10.1063/1.1521579

DO - 10.1063/1.1521579

M3 - Article

AN - SCOPUS:0037065117

SN - 0003-6951

VL - 81

SP - 3786

EP - 3788

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

ER -

Laser-induced amorphization of silicon during pulsed-laser irradiation of Tin/Ti/polycrystalline silicon/SiO₂/silicon

Abstract

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