Laser crystallization and structural characterization of hydrogenated amorphous silicon thin films

D. Toet; P. M. Smith; T. W. Sigmon; T. Takehara; C. C. Tsai; W. R. Harshbarger; M. O. Thompson

doi:10.1063/1.370607

Laser crystallization and structural characterization of hydrogenated amorphous silicon thin films

D. Toet, P. M. Smith, T. W. Sigmon, T. Takehara, C. C. Tsai, W. R. Harshbarger, M. O. Thompson

Research output: Contribution to journal › Article › peer-review

52 Scopus citations

Abstract

Hydrogenated amorphous silicon (a-Si:H) thin films were laser-crystallized using plasma-enhanced chemical vapor deposition. The laser crystallization process involved the complete melting of the a-Si:H films. Increasing the film thickness resulted in an increased grain-sizes range from 30-70 nm. Smoother poly-Si films, which are applicable for thin-film transistors (TFT), resulted from the laser processing.

Original language	English
Pages (from-to)	7914-7918
Number of pages	5
Journal	Journal of Applied Physics
Volume	85
Issue number	11
DOIs	https://doi.org/10.1063/1.370607
State	Published - Jun 1999
Externally published	Yes

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title = "Laser crystallization and structural characterization of hydrogenated amorphous silicon thin films",

abstract = "Hydrogenated amorphous silicon (a-Si:H) thin films were laser-crystallized using plasma-enhanced chemical vapor deposition. The laser crystallization process involved the complete melting of the a-Si:H films. Increasing the film thickness resulted in an increased grain-sizes range from 30-70 nm. Smoother poly-Si films, which are applicable for thin-film transistors (TFT), resulted from the laser processing.",

author = "D. Toet and Smith, \{P. M.\} and Sigmon, \{T. W.\} and T. Takehara and Tsai, \{C. C.\} and Harshbarger, \{W. R.\} and Thompson, \{M. O.\}",

year = "1999",

month = jun,

doi = "10.1063/1.370607",

language = "English",

volume = "85",

pages = "7914--7918",

journal = "Journal of Applied Physics",

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T1 - Laser crystallization and structural characterization of hydrogenated amorphous silicon thin films

AU - Toet, D.

AU - Smith, P. M.

AU - Sigmon, T. W.

AU - Takehara, T.

AU - Tsai, C. C.

AU - Harshbarger, W. R.

AU - Thompson, M. O.

PY - 1999/6

Y1 - 1999/6

N2 - Hydrogenated amorphous silicon (a-Si:H) thin films were laser-crystallized using plasma-enhanced chemical vapor deposition. The laser crystallization process involved the complete melting of the a-Si:H films. Increasing the film thickness resulted in an increased grain-sizes range from 30-70 nm. Smoother poly-Si films, which are applicable for thin-film transistors (TFT), resulted from the laser processing.

AB - Hydrogenated amorphous silicon (a-Si:H) thin films were laser-crystallized using plasma-enhanced chemical vapor deposition. The laser crystallization process involved the complete melting of the a-Si:H films. Increasing the film thickness resulted in an increased grain-sizes range from 30-70 nm. Smoother poly-Si films, which are applicable for thin-film transistors (TFT), resulted from the laser processing.

UR - https://www.scopus.com/pages/publications/0032606417

U2 - 10.1063/1.370607

DO - 10.1063/1.370607

M3 - Article

AN - SCOPUS:0032606417

SN - 0021-8979

VL - 85

SP - 7914

EP - 7918

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11

ER -

Laser crystallization and structural characterization of hydrogenated amorphous silicon thin films

Abstract

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