Laser crystallization and structural characterization of hydrogenated amorphous silicon thin films

D. Toet; P. M. Smith; T. W. Sigmon; T. Takehara; C. C. Tsai; W. R. Harshbarger; M. O. Thompson

doi:10.1063/1.370607

Laser crystallization and structural characterization of hydrogenated amorphous silicon thin films

D. Toet
, P. M. Smith
, T. W. Sigmon
, T. Takehara
, C. C. Tsai
, W. R. Harshbarger
, M. O. Thompson

Research output: Contribution to journal › Article › peer-review

54 Scopus citations

Abstract

Hydrogenated amorphous silicon (a-Si:H) thin films were laser-crystallized using plasma-enhanced chemical vapor deposition. The laser crystallization process involved the complete melting of the a-Si:H films. Increasing the film thickness resulted in an increased grain-sizes range from 30-70 nm. Smoother poly-Si films, which are applicable for thin-film transistors (TFT), resulted from the laser processing.

Original language	English
Pages (from-to)	7914-7918
Number of pages	5
Journal	Journal of Applied Physics
Volume	85
Issue number	11
DOIs	https://doi.org/10.1063/1.370607
State	Published - Jun 1999
Externally published	Yes

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title = "Laser crystallization and structural characterization of hydrogenated amorphous silicon thin films",

abstract = "Hydrogenated amorphous silicon (a-Si:H) thin films were laser-crystallized using plasma-enhanced chemical vapor deposition. The laser crystallization process involved the complete melting of the a-Si:H films. Increasing the film thickness resulted in an increased grain-sizes range from 30-70 nm. Smoother poly-Si films, which are applicable for thin-film transistors (TFT), resulted from the laser processing.",

author = "D. Toet and Smith, \{P. M.\} and Sigmon, \{T. W.\} and T. Takehara and Tsai, \{C. C.\} and Harshbarger, \{W. R.\} and Thompson, \{M. O.\}",

year = "1999",

month = jun,

doi = "10.1063/1.370607",

language = "English",

volume = "85",

pages = "7914--7918",

journal = "Journal of Applied Physics",

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AU - Toet, D.

AU - Smith, P. M.

AU - Sigmon, T. W.

AU - Takehara, T.

AU - Tsai, C. C.

AU - Harshbarger, W. R.

AU - Thompson, M. O.

PY - 1999/6

Y1 - 1999/6

N2 - Hydrogenated amorphous silicon (a-Si:H) thin films were laser-crystallized using plasma-enhanced chemical vapor deposition. The laser crystallization process involved the complete melting of the a-Si:H films. Increasing the film thickness resulted in an increased grain-sizes range from 30-70 nm. Smoother poly-Si films, which are applicable for thin-film transistors (TFT), resulted from the laser processing.

AB - Hydrogenated amorphous silicon (a-Si:H) thin films were laser-crystallized using plasma-enhanced chemical vapor deposition. The laser crystallization process involved the complete melting of the a-Si:H films. Increasing the film thickness resulted in an increased grain-sizes range from 30-70 nm. Smoother poly-Si films, which are applicable for thin-film transistors (TFT), resulted from the laser processing.

UR - https://www.scopus.com/pages/publications/0032606417

U2 - 10.1063/1.370607

DO - 10.1063/1.370607

M3 - Article

AN - SCOPUS:0032606417

SN - 0021-8979

VL - 85

SP - 7914

EP - 7918

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11

ER -

Laser crystallization and structural characterization of hydrogenated amorphous silicon thin films

Abstract

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