Laser-assisted transfer of silicon by explosive hydrogen release

D. Toet; Michael O. Thompson; P. M. Smith; T. W. Sigmon

doi:10.1063/1.123790

Laser-assisted transfer of silicon by explosive hydrogen release

D. Toet
, Michael O. Thompson
, P. M. Smith
, T. W. Sigmon

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

The transfer of Si thin films onto glass substrates using hydrogen assisted laser-induced transfer is presented. The method includes the melting of an a-Si:H film by pulsed laser irradiation, forming a hydrogen pocket at the interface between the film and its support which causes the film to accelerate and break up into droplets, which are ejected from the support, toward a receptor substrate. High energy laser annealing drastically reduces the roughness of the transferred films.

Original language	English
Pages (from-to)	2170-2172
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	15
DOIs	https://doi.org/10.1063/1.123790
State	Published - Apr 12 1999
Externally published	Yes

Access to Document

10.1063/1.123790

Cite this

@article{577fba43c6d14531b6b10699517c824e,

title = "Laser-assisted transfer of silicon by explosive hydrogen release",

abstract = "The transfer of Si thin films onto glass substrates using hydrogen assisted laser-induced transfer is presented. The method includes the melting of an a-Si:H film by pulsed laser irradiation, forming a hydrogen pocket at the interface between the film and its support which causes the film to accelerate and break up into droplets, which are ejected from the support, toward a receptor substrate. High energy laser annealing drastically reduces the roughness of the transferred films.",

author = "D. Toet and Thompson, \{Michael O.\} and Smith, \{P. M.\} and Sigmon, \{T. W.\}",

year = "1999",

month = apr,

day = "12",

doi = "10.1063/1.123790",

language = "English",

volume = "74",

pages = "2170--2172",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "15",

}

TY - JOUR

T1 - Laser-assisted transfer of silicon by explosive hydrogen release

AU - Toet, D.

AU - Thompson, Michael O.

AU - Smith, P. M.

AU - Sigmon, T. W.

PY - 1999/4/12

Y1 - 1999/4/12

N2 - The transfer of Si thin films onto glass substrates using hydrogen assisted laser-induced transfer is presented. The method includes the melting of an a-Si:H film by pulsed laser irradiation, forming a hydrogen pocket at the interface between the film and its support which causes the film to accelerate and break up into droplets, which are ejected from the support, toward a receptor substrate. High energy laser annealing drastically reduces the roughness of the transferred films.

AB - The transfer of Si thin films onto glass substrates using hydrogen assisted laser-induced transfer is presented. The method includes the melting of an a-Si:H film by pulsed laser irradiation, forming a hydrogen pocket at the interface between the film and its support which causes the film to accelerate and break up into droplets, which are ejected from the support, toward a receptor substrate. High energy laser annealing drastically reduces the roughness of the transferred films.

UR - https://www.scopus.com/pages/publications/0032621460

U2 - 10.1063/1.123790

DO - 10.1063/1.123790

M3 - Article

AN - SCOPUS:0032621460

SN - 0003-6951

VL - 74

SP - 2170

EP - 2172

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

ER -

Laser-assisted transfer of silicon by explosive hydrogen release

Abstract

Access to Document

Other files and links

Fingerprint

Cite this