Laser annealing of neutron irradiated boron-10 isotope doped diamond

K. Jagannadham; M. J. Lance; J. E. Butler

doi:10.1007/s10853-010-5102-3

Laser annealing of neutron irradiated boron-10 isotope doped diamond

K. Jagannadham, M. J. Lance, J. E. Butler

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

¹⁰B isotope doped ρ-type diamond epilayer grown by chemical vapor deposition on (110) oriented type IIa diamond single crystal substrate was subjected to neutron transmutation at a fluence of 2.4 × 10²⁰ thermal and 2.4 × 10²⁰ fast neutrons. After neutron irradiation, the epilayer and the diamond substrate were laser annealed using Nd-YAG laser irradiation with wave length, 266 nm and energy, 150 mJ per pulse. The neutron irradiated diamond epilayer and the substrate were characterized before and after laser annealing using different techniques. The characterization techniques include optical microscopy, secondary ion mass spectrometry, X-ray diffraction, Raman, photoluminescence and Fourier Transform Infrared spectroscopy, and electrical sheet conductance measurement. The results indicate that the structure of the irradiation induced amorphous epilayer changes to disordered graphite upon laser annealing. The irradiated substrate retains the (110) crystalline structure with neutron irradiation induced defects.

Original language	English
Pages (from-to)	2518-2528
Number of pages	11
Journal	Journal of Materials Science
Volume	46
Issue number	8
DOIs	https://doi.org/10.1007/s10853-010-5102-3
State	Published - Apr 2011
Externally published	Yes

Funding

Acknowledgements This research is sponsored by the Assistant Secretary for Energy Efficiency and Renewable Energy, Office of Transportation Technologies, as part of the High Temperature Materials Laboratory User Program, ORNL, managed by UT-Battelle, LLC, for the U. S. Department of Energy under contract number DE-AC05-000R22725. SIMS calibration standards were prepared by ion implantation of known concentrations of B and Li. Ion implantation was provided by the Surface Modification and Characterization Research Center at ORNL. JEB acknowledges the support from NRL/ ONR. The authors are thankful to Dr. Mark Walters for help in the use of facilities at SMIF, Duke University. The authors are also thankful to Mr. Joseph Dorsheimer of Thermo Scientific for carrying out the Raman spectroscopy imaging of the diamond epilayer surface.

Funders	Funder number
Office of Transportation Technologies
Office of Naval Research
U.S. Department of Energy	DE-AC05-000R22725
Office of Energy Efficiency and Renewable Energy
Oak Ridge National Laboratory
U.S. Naval Research Laboratory

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10.1007/s10853-010-5102-3

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@article{c5a2c27829cf49cf8ae3289709550064,

title = "Laser annealing of neutron irradiated boron-10 isotope doped diamond",

abstract = "10B isotope doped ρ-type diamond epilayer grown by chemical vapor deposition on (110) oriented type IIa diamond single crystal substrate was subjected to neutron transmutation at a fluence of 2.4 × 1020 thermal and 2.4 × 1020 fast neutrons. After neutron irradiation, the epilayer and the diamond substrate were laser annealed using Nd-YAG laser irradiation with wave length, 266 nm and energy, 150 mJ per pulse. The neutron irradiated diamond epilayer and the substrate were characterized before and after laser annealing using different techniques. The characterization techniques include optical microscopy, secondary ion mass spectrometry, X-ray diffraction, Raman, photoluminescence and Fourier Transform Infrared spectroscopy, and electrical sheet conductance measurement. The results indicate that the structure of the irradiation induced amorphous epilayer changes to disordered graphite upon laser annealing. The irradiated substrate retains the (110) crystalline structure with neutron irradiation induced defects.",

author = "K. Jagannadham and Lance, {M. J.} and Butler, {J. E.}",

year = "2011",

month = apr,

doi = "10.1007/s10853-010-5102-3",

language = "English",

volume = "46",

pages = "2518--2528",

journal = "Journal of Materials Science",

issn = "0022-2461",

publisher = "Springer",

number = "8",

}

TY - JOUR

T1 - Laser annealing of neutron irradiated boron-10 isotope doped diamond

AU - Jagannadham, K.

AU - Lance, M. J.

AU - Butler, J. E.

PY - 2011/4

Y1 - 2011/4

N2 - 10B isotope doped ρ-type diamond epilayer grown by chemical vapor deposition on (110) oriented type IIa diamond single crystal substrate was subjected to neutron transmutation at a fluence of 2.4 × 1020 thermal and 2.4 × 1020 fast neutrons. After neutron irradiation, the epilayer and the diamond substrate were laser annealed using Nd-YAG laser irradiation with wave length, 266 nm and energy, 150 mJ per pulse. The neutron irradiated diamond epilayer and the substrate were characterized before and after laser annealing using different techniques. The characterization techniques include optical microscopy, secondary ion mass spectrometry, X-ray diffraction, Raman, photoluminescence and Fourier Transform Infrared spectroscopy, and electrical sheet conductance measurement. The results indicate that the structure of the irradiation induced amorphous epilayer changes to disordered graphite upon laser annealing. The irradiated substrate retains the (110) crystalline structure with neutron irradiation induced defects.

AB - 10B isotope doped ρ-type diamond epilayer grown by chemical vapor deposition on (110) oriented type IIa diamond single crystal substrate was subjected to neutron transmutation at a fluence of 2.4 × 1020 thermal and 2.4 × 1020 fast neutrons. After neutron irradiation, the epilayer and the diamond substrate were laser annealed using Nd-YAG laser irradiation with wave length, 266 nm and energy, 150 mJ per pulse. The neutron irradiated diamond epilayer and the substrate were characterized before and after laser annealing using different techniques. The characterization techniques include optical microscopy, secondary ion mass spectrometry, X-ray diffraction, Raman, photoluminescence and Fourier Transform Infrared spectroscopy, and electrical sheet conductance measurement. The results indicate that the structure of the irradiation induced amorphous epilayer changes to disordered graphite upon laser annealing. The irradiated substrate retains the (110) crystalline structure with neutron irradiation induced defects.

UR - http://www.scopus.com/inward/record.url?scp=79751538024&partnerID=8YFLogxK

U2 - 10.1007/s10853-010-5102-3

DO - 10.1007/s10853-010-5102-3

M3 - Article

AN - SCOPUS:79751538024

SN - 0022-2461

VL - 46

SP - 2518

EP - 2528

JO - Journal of Materials Science

JF - Journal of Materials Science

IS - 8

ER -

Laser annealing of neutron irradiated boron-10 isotope doped diamond

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