Abstract
Mn-doped GaAs is studied with a real-space Hamiltonian on an fcc lattice that reproduces the valence bands of undoped GaAs. Large-scale Monte Carlo (MC) simulations on a Cray XT3, using up to a thousand nodes, were needed. Spin-orbit interaction and the random distribution of the Mn ions are considered. The hopping amplitudes are functions of the GaAs Luttinger parameters. At the realistic coupling J∼1.2eV the MC Curie temperature and magnetization curves agree with experiments for x=8.5% annealed samples. Mn-doped GaSb and GaP are also briefly discussed.
Original language | English |
---|---|
Article number | 057207 |
Journal | Physical Review Letters |
Volume | 99 |
Issue number | 5 |
DOIs | |
State | Published - Aug 1 2007 |