Large scale atmospheric pressure chemical vapor deposition of graphene

Ivan Vlassiouk; Pasquale Fulvio; Harry Meyer; Nick Lavrik; Sheng Dai; Panos Datskos; Sergei Smirnov

doi:10.1016/j.carbon.2012.11.003

Large scale atmospheric pressure chemical vapor deposition of graphene

Ivan Vlassiouk, Pasquale Fulvio, Harry Meyer, Nick Lavrik, Sheng Dai, Panos Datskos, Sergei Smirnov

Research output: Contribution to journal › Article › peer-review

239 Scopus citations

Abstract

We demonstrate that large scale high quality graphene synthesis can be performed using atmospheric pressure chemical vapor deposition (CVD) on Cu and illustrate how this procedure eliminates major difficulties associated with the low pressure CVD approach while allowing straightforward expansion of this technology to the roll-to-roll industrial scale graphene production. The detailed recipes evaluating the effects of copper foil thicknesses, purity, morphology and crystallographic orientation on the graphene growth rates and the number of graphene layers were investigated and optimized. Various foil cleaning protocols and growth conditions were evaluated and optimized to be suitable for production of large scale single layer graphene that was subsequently transferred on transparent flexible polyethylene terephthalate (PET) polymer substrates. Such "ready to use" graphene-PET sandwich structures were as large as 40″ in diagonal and >98% single layer, sufficient for many commercial and research applications. Synthesized large graphene film consists of domains exceeding 100 μm. Some curious behavior of high temperature graphene etching by oxygen is described that allows convenient visualization of interdomain boundaries and internal stresses.

Original language	English
Pages (from-to)	58-67
Number of pages	10
Journal	Carbon
Volume	54
DOIs	https://doi.org/10.1016/j.carbon.2012.11.003
State	Published - Apr 2013

Funding

I.V. was supported by the Laboratory Directed Research and Development Program of Oak Ridge National Laboratory (ORNL), managed by UT-Battelle, LLC for the US Department of Energy under Contract No. DEAC05-00OR22725. Authors thank Dr. K. Xia and Dr. M. Regmi for valuable help in obtaining XRD data; I. Ivanov for help with Raman characterization; Charles Schaich and Jim Kiggans for technical assistance. A portion of this research was conducted at the Center for Nanophase Materials Sciences, which is sponsored at Oak Ridge National Laboratory by the Scientific User Facilities Division, Office of Basic Energy Sciences, US Department of Energy.

Funders	Funder number
Scientific User Facilities Division
U.S. Department of Energy	DEAC05-00OR22725
Basic Energy Sciences
Oak Ridge National Laboratory
UT-Battelle

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10.1016/j.carbon.2012.11.003

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AU - Smirnov, Sergei

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AB - We demonstrate that large scale high quality graphene synthesis can be performed using atmospheric pressure chemical vapor deposition (CVD) on Cu and illustrate how this procedure eliminates major difficulties associated with the low pressure CVD approach while allowing straightforward expansion of this technology to the roll-to-roll industrial scale graphene production. The detailed recipes evaluating the effects of copper foil thicknesses, purity, morphology and crystallographic orientation on the graphene growth rates and the number of graphene layers were investigated and optimized. Various foil cleaning protocols and growth conditions were evaluated and optimized to be suitable for production of large scale single layer graphene that was subsequently transferred on transparent flexible polyethylene terephthalate (PET) polymer substrates. Such "ready to use" graphene-PET sandwich structures were as large as 40″ in diagonal and >98% single layer, sufficient for many commercial and research applications. Synthesized large graphene film consists of domains exceeding 100 μm. Some curious behavior of high temperature graphene etching by oxygen is described that allows convenient visualization of interdomain boundaries and internal stresses.

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Large scale atmospheric pressure chemical vapor deposition of graphene

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