Abstract
The development and applications of real-space multigrid methods are discussed. Multigrid techniques provide preconditioning and convergence acceleration at all length scales, and therefore lead to particularly efficient algorithms. When using localization regions and optimized, non-orthogonal orbitals, calculations involving over 1000 atoms become practical on massively parallel computers. The applications discussed in this chapter include: (i) dopant incorporation and ordering effects during surface incorporation of boron, which lead to the formation of ordered domains at halfmonolayer coverage; (ii) incorporation of Mg into GaN during growth, and in particular the conditions that would lead to maximum p-type doping; (iii) optical fingerprints of surface structures for use in real-time feedback control of growth; and (iv) mechanisms of stress release and quantum transport properties of carbon nanotubes.
| Original language | English |
|---|---|
| Title of host publication | Computer Simulation of Materials at Atomic Level |
| Publisher | wiley |
| Pages | 685-701 |
| Number of pages | 17 |
| ISBN (Electronic) | 9783527603107 |
| ISBN (Print) | 352740290X, 9783527402908 |
| DOIs | |
| State | Published - Jan 1 2005 |
| Externally published | Yes |
Keywords
- large-scale applications
- nanotubes
- quantum transport
- real-space multigrid methods
- surfaces