Large intrinsic anomalous Hall effect in SrIrO3 induced by magnetic proximity effect

Myoung Woo Yoo, J. Tornos, A. Sander, Ling Fang Lin, Narayan Mohanta, A. Peralta, D. Sanchez-Manzano, F. Gallego, D. Haskel, J. W. Freeland, D. J. Keavney, Y. Choi, J. Strempfer, X. Wang, M. Cabero, Hari Babu Vasili, Manuel Valvidares, G. Sanchez-Santolino, J. M. Gonzalez-Calbet, A. RiveraC. Leon, S. Rosenkranz, M. Bibes, A. Barthelemy, A. Anane, Elbio Dagotto, S. Okamoto, S. G.E. te Velthuis, J. Santamaria, Javier E. Villegas

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39 Scopus citations

Abstract

The anomalous Hall effect (AHE) is an intriguing transport phenomenon occurring typically in ferromagnets as a consequence of broken time reversal symmetry and spin-orbit interaction. It can be caused by two microscopically distinct mechanisms, namely, by skew or side-jump scattering due to chiral features of the disorder scattering, or by an intrinsic contribution directly linked to the topological properties of the Bloch states. Here we show that the AHE can be artificially engineered in materials in which it is originally absent by combining the effects of symmetry breaking, spin orbit interaction and proximity-induced magnetism. In particular, we find a strikingly large AHE that emerges at the interface between a ferromagnetic manganite (La0.7Sr0.3MnO3) and a semimetallic iridate (SrIrO3). It is intrinsic and originates in the proximity-induced magnetism present in the narrow bands of strong spin-orbit coupling material SrIrO3, which yields values of anomalous Hall conductivity and Hall angle as high as those observed in bulk transition-metal ferromagnets. These results demonstrate the interplay between correlated electron physics and topological phenomena at interfaces between 3d ferromagnets and strong spin-orbit coupling 5d oxides and trace an exciting path towards future topological spintronics at oxide interfaces.

Original languageEnglish
Article number3283
JournalNature Communications
Volume12
Issue number1
DOIs
StatePublished - Dec 1 2021

Funding

The authors acknowledge received funding from the projects Quantox of QuantERA ERA-NET Cofund in Quantum Technologies (Grant Agreement No. 731473) and To2Dox of the Flag ERA ERA-NET implemented within the European Union’s Horizon 2020 Programme. This work was supported by Spanish MINECO through grants, MAT2017-87134-C02, J.S. thanks Scholarship program Alembert funded by the IDEX Paris-Saclay, ANR-11-IDEX-0003-02. Work at CNRS/Thales lab supported by ERC grant N° 647100 “SUSPINTRONICS” and French ANR grants ANR-15-CE24-0008-01 “SUPERTRONICS” and ANR-17-CE24-0026-03 “OISO”. J.S. thanks Maria Varela for helpful discussions. L.F.L. was supported by the China Scholarship Council. The research at ORNL was supported by the US Department of Energy (DOE), Office of Science, Basic Energy Sciences, Materials Sciences, and Engineering Division. Computational studies were carried out at the Advanced Computing Facility (ACF) of the University of Tennessee Knoxville, as well as Compute and Data Environment for Science (CADES) at the Oak Ridge National Laboratory, which is supported by the Office of Science of the U.S. Department of Energy under Contract No. DE-AC05-00OR22725. Work at Bryn Mawr was supported by NSF (DMR #1708790). Work by S.G.E.t.V. and S.R. (x-ray experiments and analysis) was supported by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences, and Engineering Division. This research used resources of the Advanced Photon Source, a U.S. Department of Energy (DOE) Office of Science User Facility operated for the DOE Office of Science by Argonne National Laboratory under Contract No. DE-AC02-06CH11357.

FundersFunder number
National Science FoundationDMR #1708790
U.S. Department of EnergyDE-AC05-00OR22725
Office of Science
Basic Energy Sciences
Argonne National LaboratoryDE-AC02-06CH11357
Horizon 2020 Framework Programme647100
Division of Materials Sciences and Engineering
University of Tennessee, Knoxville
European Research CouncilANR-15-CE24-0008-01, ANR-17-CE24-0026-03
Ministerio de Economía y CompetitividadMAT2017-87134-C02, ANR-11-IDEX-0003-02
China Scholarship Council

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