Large-grain poly-crystalline silicon thin films prepared by aluminum-induced crystallization of sputter-deposited hydrogenated amorphous silicon

Maruf Hossain; Harry M. Meyer; Husam H. Abu-Safe; Hameed Naseem; W. D. Brown

doi:10.1557/jmr.2006.0091

Large-grain poly-crystalline silicon thin films prepared by aluminum-induced crystallization of sputter-deposited hydrogenated amorphous silicon

Maruf Hossain, Harry M. Meyer, Husam H. Abu-Safe, Hameed Naseem, W. D. Brown

Surface Chemistry & Catalysis Group

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

A metal-induced crystallization (MIC) technique was used to produce large-grain poly-crystalline silicon. Two sets of samples were prepared by first sputtering Al onto glass substrates. For one set of samples, hydrogenated amorphous silicon (a-Si:H) was sputtered on top of the Al without breaking the vacuum. For the second set, the samples were taken out of the vacuum chamber and exposed to the atmosphere to grow a very thin layer of native aluminum oxide before sputter depositing the a-Si:H. Both sets of samples were then annealed at temperatures between 400 and 525 °C for 40 min. X-ray diffraction patterns confirmed the crystallization of the samples. Scanning Auger microanalysis was used to confirm that the a-Si:H and Al layers exchanged positions in this structure during the crystallization process. Auger mapping revealed the formation of large grain poly-silicon (10-20 μm). A model is proposed to explain how the crystallization process progresses with anneal temperature.

Original language	English
Pages (from-to)	761-766
Number of pages	6
Journal	Journal of Materials Research
Volume	21
Issue number	3
DOIs	https://doi.org/10.1557/jmr.2006.0091
State	Published - Mar 2006

Funding

This work was supported by a grant from Department of Energy/Arkansas Experimental Program to Stimulate Competitive Research (EPSCoR) program under Lab Partnership Program (Award No. DE-FG02-ER45965). The partial support of the graduate student of the Department of Electrical Engineering is also acknowledged. Auger research at ORNL was sponsored by the Assistant Secretary for Energy Efficiency and Renewable Energy, Office of FreedomCAR and Vehicle Technologies. As part of the High Temperature Materials Laboratory User Program, Oak Ridge National Laboratory, managed by UT-Battelle, LLC, for the U.S. Department of Energy under contract number DE-AC05-00OR22725.

Funders	Funder number
Department of Energy/Arkansas Experimental Program to Stimulate Competitive Research
Office of FreedomCar
U.S. Department of Energy	DE-AC05-00OR22725
Office of Experimental Program to Stimulate Competitive Research	DE-FG02-ER45965
Office of Energy Efficiency and Renewable Energy
Oak Ridge National Laboratory

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abstract = "A metal-induced crystallization (MIC) technique was used to produce large-grain poly-crystalline silicon. Two sets of samples were prepared by first sputtering Al onto glass substrates. For one set of samples, hydrogenated amorphous silicon (a-Si:H) was sputtered on top of the Al without breaking the vacuum. For the second set, the samples were taken out of the vacuum chamber and exposed to the atmosphere to grow a very thin layer of native aluminum oxide before sputter depositing the a-Si:H. Both sets of samples were then annealed at temperatures between 400 and 525 °C for 40 min. X-ray diffraction patterns confirmed the crystallization of the samples. Scanning Auger microanalysis was used to confirm that the a-Si:H and Al layers exchanged positions in this structure during the crystallization process. Auger mapping revealed the formation of large grain poly-silicon (10-20 μm). A model is proposed to explain how the crystallization process progresses with anneal temperature.",

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AU - Meyer, Harry M.

AU - Abu-Safe, Husam H.

AU - Naseem, Hameed

AU - Brown, W. D.

PY - 2006/3

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Large-grain poly-crystalline silicon thin films prepared by aluminum-induced crystallization of sputter-deposited hydrogenated amorphous silicon

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