Large anomalous Hall effect and unusual domain switching in an orthorhombic antiferromagnetic material NbMnP

Hisashi Kotegawa; Yoshiki Kuwata; Vu Thi Ngoc Huyen; Yuki Arai; Hideki Tou; Masaaki Matsuda; Keiki Takeda; Hitoshi Sugawara; Michi To Suzuki

doi:10.1038/s41535-023-00587-2

Large anomalous Hall effect and unusual domain switching in an orthorhombic antiferromagnetic material NbMnP

Hisashi Kotegawa, Yoshiki Kuwata, Vu Thi Ngoc Huyen, Yuki Arai, Hideki Tou, Masaaki Matsuda, Keiki Takeda, Hitoshi Sugawara, Michi To Suzuki

Triple-Axis

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Specific antiferromagnetic (AF) spin configurations generate large anomalous Hall effects (AHEs) even at zero magnetic field through nonvanishing Berry curvature in momentum space. In addition to restrictions on AF structures, suitable control of AF domains is essential to observe this effect without cancellations among its domains; therefore, compatible materials remain limited. Here we show that an orthorhombic noncollinear AF material, NbMnP, acquired AF structure-based AHE and controllability of the AF domains. Theoretical calculations indicated that a large Hall conductivity of ~230 Ω⁻¹cm⁻¹ originated from the AF structure of NbMnP. Symmetry considerations explained the production of a small net magnetization, whose anisotropy enabled the generation and cancellation of the Hall responses using magnetic fields in different directions. Finally, asymmetric hysteresis in NbMnP shows potential for the development of controllability of responses in AF materials.

Original language	English
Article number	56
Journal	npj Quantum Materials
Volume	8
Issue number	1
DOIs	https://doi.org/10.1038/s41535-023-00587-2
State	Published - Dec 2023

Funding

We thank Hisatomo Harima and Youichi Yanase for valuable discussions and comments. This work was supported by JSPS KAKENHI Grant Nos. 18H04320, 18H04321, 19H01842, 21H01789, 21H04437, 21K03446, and 23H04871, Iketani Science and Technology Foundation, Hyogo Science and Technology Association, and The Murata Science Foundation. A part of the numerical calculation was performed in MASAMUNE-IMR of the Center for Computational Materials Science, Institute for Materials Research, Tohoku University. We thank Hisatomo Harima and Youichi Yanase for valuable discussions and comments. This work was supported by JSPS KAKENHI Grant Nos. 18H04320, 18H04321, 19H01842, 21H01789, 21H04437, 21K03446, and 23H04871, Iketani Science and Technology Foundation, Hyogo Science and Technology Association, and The Murata Science Foundation. A part of the numerical calculation was performed in MASAMUNE-IMR of the Center for Computational Materials Science, Institute for Materials Research, Tohoku University.

Access to Document

10.1038/s41535-023-00587-2

Cite this

@article{6027dcb694084d558af6485a72df75ca,

title = "Large anomalous Hall effect and unusual domain switching in an orthorhombic antiferromagnetic material NbMnP",

abstract = "Specific antiferromagnetic (AF) spin configurations generate large anomalous Hall effects (AHEs) even at zero magnetic field through nonvanishing Berry curvature in momentum space. In addition to restrictions on AF structures, suitable control of AF domains is essential to observe this effect without cancellations among its domains; therefore, compatible materials remain limited. Here we show that an orthorhombic noncollinear AF material, NbMnP, acquired AF structure-based AHE and controllability of the AF domains. Theoretical calculations indicated that a large Hall conductivity of ~230 Ω−1cm−1 originated from the AF structure of NbMnP. Symmetry considerations explained the production of a small net magnetization, whose anisotropy enabled the generation and cancellation of the Hall responses using magnetic fields in different directions. Finally, asymmetric hysteresis in NbMnP shows potential for the development of controllability of responses in AF materials.",

author = "Hisashi Kotegawa and Yoshiki Kuwata and Huyen, {Vu Thi Ngoc} and Yuki Arai and Hideki Tou and Masaaki Matsuda and Keiki Takeda and Hitoshi Sugawara and Suzuki, {Michi To}",

note = "Publisher Copyright: {\textcopyright} 2023, Springer Nature Limited.",

year = "2023",

month = dec,

doi = "10.1038/s41535-023-00587-2",

language = "English",

volume = "8",

journal = "npj Quantum Materials",

issn = "2397-4648",

publisher = "Nature Research",

number = "1",

}

TY - JOUR

T1 - Large anomalous Hall effect and unusual domain switching in an orthorhombic antiferromagnetic material NbMnP

AU - Kotegawa, Hisashi

AU - Kuwata, Yoshiki

AU - Huyen, Vu Thi Ngoc

AU - Arai, Yuki

AU - Tou, Hideki

AU - Matsuda, Masaaki

AU - Takeda, Keiki

AU - Sugawara, Hitoshi

AU - Suzuki, Michi To

PY - 2023/12

Y1 - 2023/12

N2 - Specific antiferromagnetic (AF) spin configurations generate large anomalous Hall effects (AHEs) even at zero magnetic field through nonvanishing Berry curvature in momentum space. In addition to restrictions on AF structures, suitable control of AF domains is essential to observe this effect without cancellations among its domains; therefore, compatible materials remain limited. Here we show that an orthorhombic noncollinear AF material, NbMnP, acquired AF structure-based AHE and controllability of the AF domains. Theoretical calculations indicated that a large Hall conductivity of ~230 Ω−1cm−1 originated from the AF structure of NbMnP. Symmetry considerations explained the production of a small net magnetization, whose anisotropy enabled the generation and cancellation of the Hall responses using magnetic fields in different directions. Finally, asymmetric hysteresis in NbMnP shows potential for the development of controllability of responses in AF materials.

AB - Specific antiferromagnetic (AF) spin configurations generate large anomalous Hall effects (AHEs) even at zero magnetic field through nonvanishing Berry curvature in momentum space. In addition to restrictions on AF structures, suitable control of AF domains is essential to observe this effect without cancellations among its domains; therefore, compatible materials remain limited. Here we show that an orthorhombic noncollinear AF material, NbMnP, acquired AF structure-based AHE and controllability of the AF domains. Theoretical calculations indicated that a large Hall conductivity of ~230 Ω−1cm−1 originated from the AF structure of NbMnP. Symmetry considerations explained the production of a small net magnetization, whose anisotropy enabled the generation and cancellation of the Hall responses using magnetic fields in different directions. Finally, asymmetric hysteresis in NbMnP shows potential for the development of controllability of responses in AF materials.

UR - http://www.scopus.com/inward/record.url?scp=85173678354&partnerID=8YFLogxK

U2 - 10.1038/s41535-023-00587-2

DO - 10.1038/s41535-023-00587-2

M3 - Article

AN - SCOPUS:85173678354

SN - 2397-4648

VL - 8

JO - npj Quantum Materials

JF - npj Quantum Materials

IS - 1

M1 - 56

ER -

Large anomalous Hall effect and unusual domain switching in an orthorhombic antiferromagnetic material NbMnP

Abstract

Funding

Access to Document

Other files and links

Fingerprint

Cite this