Abstract
The kinetics of hydrogen desorption in surface-limited thin-film growth of SiGe alloys from binary mixtures of disilane and digermane was investigated by surface differential reflectance. The hydrogen desorption process from the alloy surface was found to consist of two components. Both components are thermally activated, but the activation energies appear to equal neither the hydrogen desorption energy from pure silicon nor that from pure germanium surfaces. We suggest that the two components represent Ge- and Si-mediated hydrogen desorption, with the former being more rapid than the latter.
| Original language | English |
|---|---|
| Pages (from-to) | 2807-2809 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 62 |
| Issue number | 22 |
| DOIs | |
| State | Published - 1993 |